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Power Field-Effect Transistor, 180A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFB4110PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1436955
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Farnell | MOSFET, N, 100V, TO-220AB RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Each | 4498 |
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$1.6536 / $2.4866 | Buy Now |
DISTI #
IRFB4110PBF
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Avnet Americas | Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4110PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube | 1492 |
|
$0.9168 / $0.9653 | Buy Now |
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Rochester Electronics | IRFB4110PBF - TRENCH >=100V RoHS: Compliant Status: Active Min Qty: 1 | 1380 |
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$0.9265 / $1.0900 | Buy Now |
DISTI #
IRFB4110PBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 130A, 370W, TO220AB Min Qty: 1 | 865 |
|
$1.5800 / $2.5900 | Buy Now |
DISTI #
C1S322000521274
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Chip One Stop | Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Container: Tube | 1730 |
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$0.9610 / $2.1800 | Buy Now |
DISTI #
SP001570598
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EBV Elektronik | Trans MOSFET NCH 100V 180A 3Pin3Tab TO220AB (Alt: SP001570598) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days | EBV - 1000 |
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Buy Now | |
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LCSC | 100V 180A 4.5m10V75A 370W 4V 1 N-channel TO-220 MOSFETs ROHS | 41986 |
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$0.4376 / $0.8630 | Buy Now |
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New Advantage Corporation | Single N-Channel 100 V 4.5 mOhm 210 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 1000 | 1000 |
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$1.4700 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 120A TO-220AB | 56400 |
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$0.4800 / $0.6200 | Buy Now |
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IRFB4110PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFB4110PBF
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 190 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 370 W | |
Pulsed Drain Current-Max (IDM) | 670 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFB4110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRFB4110GPBF | Infineon Technologies AG | $1.5775 | Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 | IRFB4110PBF vs IRFB4110GPBF |
IRFB4110GPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 | IRFB4110PBF vs IRFB4110GPBF |
IRFB4110PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 180A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | IRFB4110PBF vs IRFB4110PBF |