Datasheets
IRFB4110PBF by:

Power Field-Effect Transistor, 180A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRFB4110PBF by Infineon Technologies AG

Results Overview of IRFB4110PBF by Infineon Technologies AG

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IRFB4110PBF Information

IRFB4110PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFB4110PBF

Part # Distributor Description Stock Price Buy
DISTI # 1436955
Farnell MOSFET, N, 100V, TO-220AB RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Each 4498
  • 1 $2.4866
  • 10 $1.7033
  • 100 $1.6785
  • 500 $1.6660
  • 1,000 $1.6536
$1.6536 / $2.4866 Buy Now
DISTI # IRFB4110PBF
Avnet Americas Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4110PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube 1492
  • 1 $0.9653
  • 10 $0.9604
  • 30 $0.9555
  • 50 $0.9505
  • 100 $0.9168
$0.9168 / $0.9653 Buy Now
Rochester Electronics IRFB4110PBF - TRENCH >=100V RoHS: Compliant Status: Active Min Qty: 1 1380
  • 1 $1.0900
  • 25 $1.0700
  • 100 $1.0200
  • 500 $0.9810
  • 1,000 $0.9265
$0.9265 / $1.0900 Buy Now
DISTI # IRFB4110PBF
TME Transistor: N-MOSFET, unipolar, 100V, 130A, 370W, TO220AB Min Qty: 1 865
  • 1 $2.5900
  • 25 $2.1200
  • 50 $2.0300
  • 100 $1.9500
  • 1,000 $1.6600
  • 2,000 $1.5800
$1.5800 / $2.5900 Buy Now
DISTI # C1S322000521274
Chip One Stop Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Container: Tube 1730
  • 1 $2.1800
  • 10 $1.6700
  • 50 $1.0900
  • 100 $0.9870
  • 500 $0.9610
$0.9610 / $2.1800 Buy Now
DISTI # SP001570598
EBV Elektronik Trans MOSFET NCH 100V 180A 3Pin3Tab TO220AB (Alt: SP001570598) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days EBV - 1000
Buy Now
LCSC 100V 180A 4.5m10V75A 370W 4V 1 N-channel TO-220 MOSFETs ROHS 41986
  • 1 $0.8630
  • 10 $0.7299
  • 50 $0.5539
  • 100 $0.4759
  • 600 $0.4514
  • 900 $0.4376
$0.4376 / $0.8630 Buy Now
New Advantage Corporation Single N-Channel 100 V 4.5 mOhm 210 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 1000 1000
  • 1,000 $1.4700
$1.4700 Buy Now
Win Source Electronics MOSFET N-CH 100V 120A TO-220AB 56400
  • 85 $0.6200
  • 175 $0.5800
  • 270 $0.5600
  • 385 $0.5200
  • 500 $0.5000
  • 625 $0.4800
$0.4800 / $0.6200 Buy Now

Part Details for IRFB4110PBF

IRFB4110PBF CAD Models

IRFB4110PBF Part Data Attributes

IRFB4110PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFB4110PBF Infineon Technologies AG Power Field-Effect Transistor, 180A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 190 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 370 W
Pulsed Drain Current-Max (IDM) 670 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFB4110PBF

This table gives cross-reference parts and alternative options found for IRFB4110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFB4110GPBF Infineon Technologies AG $1.5775 Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 IRFB4110PBF vs IRFB4110GPBF
IRFB4110GPBF International Rectifier Check for Price Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 IRFB4110PBF vs IRFB4110GPBF
IRFB4110PBF International Rectifier Check for Price Power Field-Effect Transistor, 180A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 IRFB4110PBF vs IRFB4110PBF
Part Number Manufacturer Composite Price Description Compare
FDB047N10 onsemi $2.4924 Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL IRFB4110PBF vs FDB047N10
PSMN4R8-100PSE Nexperia Check for Price Power Field-Effect Transistor IRFB4110PBF vs PSMN4R8-100PSE
IPP120N10S4-05 Infineon Technologies AG Check for Price Power Field-Effect Transistor IRFB4110PBF vs IPP120N10S4-05
PSMN4R8-100BSE Nexperia Check for Price Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRFB4110PBF vs PSMN4R8-100BSE
PSMN4R8-100BSEJ Nexperia $2.3821 PSMN4R8-100BSE - N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin IRFB4110PBF vs PSMN4R8-100BSEJ

IRFB4110PBF Related Parts

IRFB4110PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFB4110PBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.

  • The recommended gate drive voltage for the IRFB4110PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRFB4110PBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified switching frequency and voltage ratings.

  • Use a suitable overvoltage protection circuit, such as a zener diode or a transient voltage suppressor, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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