Transistors
IRFB4310GPBF
International Rectifier
Description: Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

Overview of IRFB4310GPBF by International Rectifier

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Part Data Attributes for IRFB4310GPBF by International Rectifier

IRFB4310GPBF
International Rectifier
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-220AB
Package Description
HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
980 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
75 A
Drain-source On Resistance-Max
0.007 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
300 W
Pulsed Drain Current-Max (IDM)
550 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRFB4310GPBF
    International Rectifier
    Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
    VS

Alternate Parts for IRFB4310GPBF

This table gives cross-reference parts and alternative options found for IRFB4310GPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4310GPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFB4310HR Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 International Rectifier IRFB4310GPBF vs IRFB4310HR
IRFB4310 Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRFB4310GPBF vs IRFB4310
Part Number Description Manufacturer Compare
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments IRFB4310GPBF vs NDB706AL
IPB80N06S2LH5ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IRFB4310GPBF vs IPB80N06S2LH5ATMA1
IXFH12N100F Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation IRFB4310GPBF vs IXFH12N100F
F10F6N Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN Shindengen Electronic Manufacturing Co Ltd IRFB4310GPBF vs F10F6N
STP9NK65Z N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET STMicroelectronics IRFB4310GPBF vs STP9NK65Z
STD5NE10T4 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics IRFB4310GPBF vs STD5NE10T4
NDB705BEL TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power National Semiconductor Corporation IRFB4310GPBF vs NDB705BEL
IXFH30N40Q Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Littelfuse Inc IRFB4310GPBF vs IXFH30N40Q
SPB80N06S2-07 Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IRFB4310GPBF vs SPB80N06S2-07
SPP80N03S2L-05 Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IRFB4310GPBF vs SPP80N03S2L-05

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