There are no models available for this part yet.
Overview of IRFD123 by Motorola Mobility LLC
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 3 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRFD123 by Motorola Mobility LLC
Part Data Attributes for IRFD123 by Motorola Mobility LLC
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
MOTOROLA INC
|
Package Description
|
IN-LINE, R-PDIP-T3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
Drain Current-Max (ID)
|
1.1 A
|
Drain-source On Resistance-Max
|
0.4 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
100 pF
|
JESD-30 Code
|
R-PDIP-T3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
IN-LINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
1 W
|
Power Dissipation-Max (Abs)
|
1 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
DUAL
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRFD123
This table gives cross-reference parts and alternative options found for IRFD123. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD123, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFD123 | 1100mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Intersil Corporation | IRFD123 vs IRFD123 |
IRFD123 | Small Signal Field-Effect Transistor, 1.1A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Harris Semiconductor | IRFD123 vs IRFD123 |
IRFD123 | Power Field-Effect Transistor, 1.1A I(D), 80V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMILAR TO MO-001AN, 3 PIN | International Rectifier | IRFD123 vs IRFD123 |
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