-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
31K1939
|
Newark | N Channel Mosfet, 100V, 1.3A, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:1.3A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Product Range:- Rohs Compliant: Yes |Vishay IRFD123PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 114 |
|
$0.6160 / $0.7280 | Buy Now |
DISTI #
IRFD123PBF
|
Avnet Americas | Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP - Tape and Reel (Alt: IRFD123PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.5400 / $0.6860 | Buy Now |
DISTI #
31K1939
|
Avnet Americas | Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP - Bulk (Alt: 31K1939) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 1 Days Container: Bulk | 114 Partner Stock |
|
$0.6610 / $1.3800 | Buy Now |
DISTI #
844-IRFD123PBF
|
Mouser Electronics | MOSFET 100V N-CH HEXFET HEXDI RoHS: Compliant | 5369 |
|
$0.5000 / $1.0400 | Buy Now |
|
Future Electronics | Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - HVMDIP RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Bag | 0Bag |
|
$0.5050 / $0.5300 | Buy Now |
DISTI #
IRFD123PBF
|
TTI | MOSFET 100V N-CH HEXFET HEXDI RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 2500 In Stock |
|
$0.4900 / $0.8600 | Buy Now |
DISTI #
IRFD123PBF
|
Avnet Americas | Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP - Tape and Reel (Alt: IRFD123PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.5400 / $0.6860 | Buy Now |
DISTI #
31K1939
|
Avnet Americas | Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP - Bulk (Alt: 31K1939) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 1 Days Container: Bulk | 114 Partner Stock |
|
$0.6610 / $1.3800 | Buy Now |
DISTI #
IRFD123PBF
|
TME | Transistor: N-MOSFET, unipolar, 100V, 1.3A, Idm: 10A, 1.3W, HVMDIP Min Qty: 1 | 0 |
|
$0.4080 / $0.8150 | RFQ |
DISTI #
IRFD123PBF
|
EBV Elektronik | Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP (Alt: IRFD123PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 1 Weeks, 6 Days | EBV - 0 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRFD123PBF
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
IRFD123PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks, 1 Day | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 1.3 A | |
Drain-source On Resistance-Max | 0.27 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.3 W | |
Pulsed Drain Current-Max (IDM) | 10 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFD123PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD123PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFD123 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | IRFD123PBF vs IRFD123 |