Part Details for IRFF110 by Intersil Corporation
Overview of IRFF110 by Intersil Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
Price & Stock for IRFF110
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET | 21000 |
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RFQ |
Part Details for IRFF110
IRFF110 CAD Models
IRFF110 Part Data Attributes:
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IRFF110
Intersil Corporation
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Datasheet
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Compare Parts:
IRFF110
Intersil Corporation
3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERSIL CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH INPUT IMPEDANCE | |
| Avalanche Energy Rating (Eas) | 19 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 15 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFF110
This table gives cross-reference parts and alternative options found for IRFF110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N6782-QR-B | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF110 vs 2N6782-QR-B |
| JANTXV2N6782 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corp (RETIRED) | IRFF110 vs JANTXV2N6782 |
| JANTX2N6782 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corp (RETIRED) | IRFF110 vs JANTX2N6782 |
| JANTX2N6782 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Infineon Technologies AG | IRFF110 vs JANTX2N6782 |
| 2N6782-QRR1 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | TT Electronics Resistors | IRFF110 vs 2N6782-QRR1 |
| 2N6782-QR-B | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | TT Electronics Resistors | IRFF110 vs 2N6782-QR-B |
| JANTX2N6782 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, | Microsemi Corporation | IRFF110 vs JANTX2N6782 |
| 2N6782TX | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | International Rectifier | IRFF110 vs 2N6782TX |
| JANTXV2N6782 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Semicoa Semiconductors | IRFF110 vs JANTXV2N6782 |
| JANTXV2N6782 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corporation | IRFF110 vs JANTXV2N6782 |