Part Details for IRFHM8363TRPBF by Infineon Technologies AG
Overview of IRFHM8363TRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFHM8363TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
448-IRFHM8363TRPBFCT-ND
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DigiKey | MOSFET 2N-CH 30V 11A 8PQFN Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Limited Supply - Call |
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$0.3974 / $1.0600 | Buy Now |
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DISTI #
IRFHM8363TRPBF
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 10A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFHM8363TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.3702 / $0.4230 | Buy Now |
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DISTI #
942-IRFHM8363TRPBF
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Mouser Electronics | MOSFET 30V DUAL N-CH HEXFET 14.9mOhms 15nC RoHS: Compliant | 0 |
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Order Now | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
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$0.3730 | Buy Now |
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DISTI #
IRFHM8363TRPBF
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 10A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFHM8363TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.3702 / $0.4230 | Buy Now |
|
DISTI #
IRFHM8363TRPBF
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 10A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFHM8363TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.3702 / $0.4230 | Buy Now |
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DISTI #
SP001565948
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EBV Elektronik | Transistor MOSFET Array Dual N-CH 30V 10A 8-Pin PQFN T/R (Alt: SP001565948) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 7 Weeks, 4 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET 2N-CH 30V 11A 8PQFN | 109000 |
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$0.5660 / $0.8480 | Buy Now |
Part Details for IRFHM8363TRPBF
IRFHM8363TRPBF CAD Models
IRFHM8363TRPBF Part Data Attributes
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IRFHM8363TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFHM8363TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 30V, 0.0149ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, S-PDSO-N8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 29 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.0149 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 100 pF | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 19 W | |
| Pulsed Drain Current-Max (IDM) | 116 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFHM8363TRPBF
This table gives cross-reference parts and alternative options found for IRFHM8363TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFHM8363TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFHM8363TRPBF | Power Field-Effect Transistor, 11A I(D), 30V, 0.0149ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | International Rectifier | IRFHM8363TRPBF vs IRFHM8363TRPBF |
| IRFHM8363TR2PBF | Power Field-Effect Transistor, 11A I(D), 30V, 0.0149ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | International Rectifier | IRFHM8363TRPBF vs IRFHM8363TR2PBF |