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Part Details for IRFL110TRPBF by Vishay Siliconix
Overview of IRFL110TRPBF by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFL110TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFL110PBFCT-ND
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DigiKey | MOSFET N-CH 100V 1.5A SOT223 Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6094 In Stock |
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$0.2966 / $0.9000 | Buy Now |
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New Advantage Corporation | Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 52500 |
|
$0.3133 / $0.3357 | Buy Now |
Part Details for IRFL110TRPBF
IRFL110TRPBF CAD Models
IRFL110TRPBF Part Data Attributes
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IRFL110TRPBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRFL110TRPBF
Vishay Siliconix
Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-261AA | |
| Package Description | SOT-223, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1.5 A | |
| Drain-source On Resistance-Max | 0.54 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 15 pF | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PSSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.1 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | IEC-61249-2-21 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFL110TRPBF
This table gives cross-reference parts and alternative options found for IRFL110TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL110TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSP373NH6327XTSA1 | Small Signal Field-Effect Transistor, 1-Element, Silicon, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | IRFL110TRPBF vs BSP373NH6327XTSA1 |
| IRLM120A | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fairchild Semiconductor Corporation | IRFL110TRPBF vs IRLM120A |
| IRLM120AS62Z | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRFL110TRPBF vs IRLM120AS62Z |
| PMT200EN,115 | 100 V N-channel Trench MOSFET SC-73 4-Pin | NXP Semiconductors | IRFL110TRPBF vs PMT200EN,115 |
| BSP372L6327 | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | IRFL110TRPBF vs BSP372L6327 |
| BSP372L6327HTSA1 | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | IRFL110TRPBF vs BSP372L6327HTSA1 |
| IRLM120ATF_NL | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRFL110TRPBF vs IRLM120ATF_NL |
| BSP373N | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | IRFL110TRPBF vs BSP373N |
| IRFL4310PBF | Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | International Rectifier | IRFL110TRPBF vs IRFL4310PBF |
| BSP372 | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN | Infineon Technologies AG | IRFL110TRPBF vs BSP372 |