Datasheets
IRFL214PBF by:

Small Signal Field-Effect Transistor, 0.79A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4

Part Details for IRFL214PBF by Vishay Intertechnologies

Overview of IRFL214PBF by Vishay Intertechnologies

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Price & Stock for IRFL214PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFL214PBF
Avnet Americas Trans MOSFET N-CH 250V 0.79A 4-Pin(3+Tab) SOT-223 - Bulk (Alt: IRFL214PBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk 0
RFQ
DISTI # 70078919
RS MOSFET, Power, N-Ch, VDSS 250V, RDS(ON) 2 Ohms, ID 0.79A, SOT-223,PD 3.1W, VGS +/-20V | Vishay PCS IRFL214PBF RoHS: Not Compliant Min Qty: 4000 Package Multiple: 1 Container: Bulk 0
  • 4,000 $0.9100
  • 40,000 $0.8600
  • 200,000 $0.8200
  • 400,000 $0.7700
$0.7700 / $0.9100 RFQ
DISTI # IRFL214PBF
Avnet Americas Trans MOSFET N-CH 250V 0.79A 4-Pin(3+Tab) SOT-223 - Bulk (Alt: IRFL214PBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk 0
RFQ
ComSIT USA POWER MOSFET Small Signal Field-Effect Transistor, 0.79A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA RoHS: Compliant Europe - 6560
RFQ
Chip1Cloud MOSFET N-CH 250V 790MA SOT223 1910
RFQ

Part Details for IRFL214PBF

IRFL214PBF CAD Models

IRFL214PBF Part Data Attributes:

IRFL214PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFL214PBF Vishay Intertechnologies Small Signal Field-Effect Transistor, 0.79A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-261AA
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 0.79 A
Drain-source On Resistance-Max 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL214PBF

This table gives cross-reference parts and alternative options found for IRFL214PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL214PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFL214 Small Signal Field-Effect Transistor, 0.79A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier IRFL214PBF vs IRFL214
IRFL214TRPBF Small Signal Field-Effect Transistor, 0.79A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 Vishay Siliconix IRFL214PBF vs IRFL214TRPBF
IRFL214TRPBF Small Signal Field-Effect Transistor, 0.79A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier IRFL214PBF vs IRFL214TRPBF
IRFL214PBF Small Signal Field-Effect Transistor, 0.79A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier IRFL214PBF vs IRFL214PBF
IRFL214TRPBF Small Signal Field-Effect Transistor, 0.79A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay Intertechnologies IRFL214PBF vs IRFL214TRPBF
Part Number Description Manufacturer Compare
IRFL214TRPBF Small Signal Field-Effect Transistor, 0.79A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier IRFL214PBF vs IRFL214TRPBF
IRFL214PBF Small Signal Field-Effect Transistor, 0.79A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier IRFL214PBF vs IRFL214PBF
IRFL214TRPBF Small Signal Field-Effect Transistor, 0.79A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 Vishay Siliconix IRFL214PBF vs IRFL214TRPBF
IRFL214TRPBF Small Signal Field-Effect Transistor, 0.79A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay Intertechnologies IRFL214PBF vs IRFL214TRPBF
IRFL214 Small Signal Field-Effect Transistor, 0.79A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier IRFL214PBF vs IRFL214

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