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Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
91Y4707
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Newark | Mosfet, N-Ch, 200V, 30A, 175Deg C, 214W, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:30A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFP250MPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 10050 |
|
$1.2500 / $2.5300 | Buy Now |
DISTI #
IRFP250MPBF-ND
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DigiKey | MOSFET N-CH 200V 30A TO247AC Min Qty: 1 Lead time: 10 Weeks Container: Tube |
8325 In Stock |
|
$1.0504 / $2.4200 | Buy Now |
DISTI #
IRFP250MPBF
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Avnet Americas | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP250MPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 25 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
|
$0.8810 / $1.0698 | Buy Now |
DISTI #
91Y4707
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Avnet Americas | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 91Y4707) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 151 Partner Stock |
|
$1.4000 / $2.5300 | Buy Now |
DISTI #
942-IRFP250MPBF
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Mouser Electronics | MOSFET MOSFT 200V 30A 75mOhm 82nCAC RoHS: Compliant | 3395 |
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$1.0500 / $2.3400 | Buy Now |
DISTI #
70019715
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RS | IRFP250MPBF N-channel MOSFET Transistor, 30 A, 200 V, 3-Pin TO-247AC | Infineon IRFP250MPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$1.8000 / $2.2600 | RFQ |
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Future Electronics | Single N-Channel 200 V 75 mOhm 123 nC HEXFET® Power Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Container: Tube | 850Tube |
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$0.6100 / $0.7350 | Buy Now |
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Future Electronics | Single N-Channel 200 V 75 mOhm 123 nC HEXFET® Power Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 25 Container: Tube | 0Tube |
|
$0.9900 / $1.2000 | Buy Now |
DISTI #
IRFP250MPBF
|
Avnet Americas | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP250MPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 25 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
|
$0.8810 / $1.0698 | Buy Now |
DISTI #
91Y4707
|
Avnet Americas | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 91Y4707) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 151 Partner Stock |
|
$1.4000 / $2.5300 | Buy Now |
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IRFP250MPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFP250MPBF
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 315 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 214 W | |
Pulsed Drain Current-Max (IDM) | 120 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |