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Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFR5305TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
48W3427
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Newark | Mosfet Transistor, P Channel, 31 A, 55 V, 65 Mohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IRFR5305TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 96133 |
|
$0.3400 | Buy Now |
DISTI #
26AC0550
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Newark | Planar_Mosfets Rohs Compliant: Yes |Infineon IRFR5305TRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.3070 | Buy Now |
DISTI #
IRFR5305TRPBF
|
Avnet Americas | Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR5305TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks, 0 Days Container: Reel | 4000 |
|
$0.3120 / $0.3185 | Buy Now |
DISTI #
48W3427
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Avnet Americas | Power MOSFET, P Channel, 55 V, 31 A, 65 Milliohms, TO-252AA (DPAK), 3 Pins, Surface Mount - Bulk (Alt: 48W3427) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 22425 Partner Stock |
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$0.6350 / $1.2400 | Buy Now |
DISTI #
70017406
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RS | MOSFET, Power, P-Ch, VDSS -55V, RDS(ON) 0.065Ohm, ID -31A, D-Pak (TO-252AA),PD 110W | Infineon IRFR5305TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
|
$0.8200 / $0.9600 | RFQ |
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Bristol Electronics | Min Qty: 6 | 1030 |
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$0.2520 / $0.9000 | Buy Now |
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Bristol Electronics | 666 |
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RFQ | ||
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Rochester Electronics | IRFR5305 - Automotive HEXFET P-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 670 |
|
$0.3471 / $0.4083 | Buy Now |
DISTI #
IRFR5305TRPBF
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TME | Transistor: P-MOSFET, unipolar, -55V, -28A, 89W, DPAK Min Qty: 1 | 625 |
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$0.2740 / $0.6890 | Buy Now |
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Ameya Holding Limited | Single P-Channel 55V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-252AA | 113 |
|
RFQ |
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IRFR5305TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR5305TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 280 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 31 A | |
Drain-source On Resistance-Max | 0.065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 110 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFR5305TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR5305TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRFR5305TR | Infineon Technologies AG | Check for Price | Transistor | IRFR5305TRPBF vs IRFR5305TR |
IRFR5305TRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRFR5305TRPBF vs IRFR5305TRRPBF |
IRFR5305 | International Rectifier | Check for Price | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | IRFR5305TRPBF vs IRFR5305 |
IRFR5305TRPBF | International Rectifier | $0.3653 | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRFR5305TRPBF vs IRFR5305TRPBF |
IRFR5305PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRFR5305TRPBF vs IRFR5305PBF |
IRFR5305TRLPBF | Infineon Technologies AG | $0.8330 | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRFR5305TRPBF vs IRFR5305TRLPBF |