IRFS23N20D
Description: Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

Overview of IRFS23N20D by Infineon Technologies AG

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Where used in Applications: Energy and Power Systems Renewable Energy

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Part Data Attributes for IRFS23N20D by Infineon Technologies AG

IRFS23N20D
Infineon Technologies AG
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
D2PAK-3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
250 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
24 A
Drain-source On Resistance-Max
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
225
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
96 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFS23N20D
    Infineon Technologies AG
    Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
    VS

Alternate Parts for IRFS23N20D

This table gives cross-reference parts and alternative options found for IRFS23N20D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS23N20D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFS23N20DTRLP Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRFS23N20D vs IRFS23N20DTRLP
IRFS23N20DTRLP Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRFS23N20D vs IRFS23N20DTRLP
IRFS23N20DTRR Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRFS23N20D vs IRFS23N20DTRR
IRFS23N20DPBF Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRFS23N20D vs IRFS23N20DPBF
IRFS23N20DPBF Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRFS23N20D vs IRFS23N20DPBF
IRFS23N20DTRRP Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRFS23N20D vs IRFS23N20DTRRP
IRFS23N20DTRRP Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRFS23N20D vs IRFS23N20DTRRP
Part Number Description Manufacturer Compare
IRFS23N20DPBF Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRFS23N20D vs IRFS23N20DPBF
PSMN070-200B Power Field-Effect Transistor Nexperia IRFS23N20D vs PSMN070-200B
IRFS23N20DTRRP Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRFS23N20D vs IRFS23N20DTRRP
PSMN070-200B/T3 Power Field-Effect Transistor Nexperia IRFS23N20D vs PSMN070-200B/T3
IRFS31N20DTRLP Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3/2 Infineon Technologies AG IRFS23N20D vs IRFS31N20DTRLP
IRFS23N20DTRLP Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRFS23N20D vs IRFS23N20DTRLP

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