Part Details for IRFS3207PBF by Infineon Technologies AG
Overview of IRFS3207PBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFS3207PBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFS3207PBF-ND
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DigiKey | MOSFET N-CH 75V 170A D2PAK Lead time: 98 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
DISTI #
70018334
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RS | IRFS3207PBF N-channel MOSFET Transistor, 180 A, 75 V, 3-Pin D2PAK | Infineon IRFS3207PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$3.3100 | RFQ |
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Win Source Electronics | MOSFET N-CH 75V 170A D2PAK | 22420 |
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$1.8840 / $2.8260 | Buy Now |
Part Details for IRFS3207PBF
IRFS3207PBF CAD Models
IRFS3207PBF Part Data Attributes:
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IRFS3207PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFS3207PBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 910 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.0045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 720 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFS3207PBF
This table gives cross-reference parts and alternative options found for IRFS3207PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS3207PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFS3207TRR | Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFS3207PBF vs IRFS3207TRR |
IRFS3207ZTRLPBF | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRFS3207PBF vs IRFS3207ZTRLPBF |
AUIRFS3207ZTRL | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Infineon Technologies AG | IRFS3207PBF vs AUIRFS3207ZTRL |
AUIRFS3207ZTRR | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFS3207PBF vs AUIRFS3207ZTRR |
IRFS3207ZTRRPBF | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRFS3207PBF vs IRFS3207ZTRRPBF |
AUIRFS3207ZTRL | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | International Rectifier | IRFS3207PBF vs AUIRFS3207ZTRL |
AUIRFS3207ZTRR | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | International Rectifier | IRFS3207PBF vs AUIRFS3207ZTRR |
IRFS3207ZTRRPBF | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | IRFS3207PBF vs IRFS3207ZTRRPBF |
IRFS3207TRRPBF | Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFS3207PBF vs IRFS3207TRRPBF |
IRFS3207TRLPBF | Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFS3207PBF vs IRFS3207TRLPBF |