Datasheets
IRFS33N15DPBF by:

Power Field-Effect Transistor,

Part Details for IRFS33N15DPBF by Infineon Technologies AG

Overview of IRFS33N15DPBF by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for IRFS33N15DPBF

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IRFS33N15DPBF Part Data Attributes:

IRFS33N15DPBF Infineon Technologies AG
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IRFS33N15DPBF Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 330 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 33 A
Drain-source On Resistance-Max 0.056 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 91 pF
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 170 W
Pulsed Drain Current-Max (IDM) 130 A
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFS33N15DPBF

This table gives cross-reference parts and alternative options found for IRFS33N15DPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS33N15DPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFS33N15DTRR Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRFS33N15DPBF vs IRFS33N15DTRR
IRFS33N15D Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Infineon Technologies AG IRFS33N15DPBF vs IRFS33N15D
IRFS33N15DTRRPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRFS33N15DPBF vs IRFS33N15DTRRPBF
IRFS33N15DTRLP Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRFS33N15DPBF vs IRFS33N15DTRLP
Part Number Description Manufacturer Compare
IRFS33N15DTRR Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRFS33N15DPBF vs IRFS33N15DTRR
IRFS33N15D Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Infineon Technologies AG IRFS33N15DPBF vs IRFS33N15D
IRFS33N15DTRRPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRFS33N15DPBF vs IRFS33N15DTRRPBF
IRFS33N15DTRLP Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRFS33N15DPBF vs IRFS33N15DTRLP

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