Part Details for IRFS9N60A by International Rectifier
Overview of IRFS9N60A by International Rectifier
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRFS9N60A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1366 |
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RFQ | ||
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Bristol Electronics | Min Qty: 2 | 8 |
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$2.9120 / $4.4800 | Buy Now |
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Quest Components | 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET | 98 |
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$2.4960 / $3.7440 | Buy Now |
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Quest Components | 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET | 1092 |
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$2.2500 / $4.5000 | Buy Now |
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Quest Components | 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET | 6 |
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$3.0000 / $6.0000 | Buy Now |
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Quest Components | 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET | 110 |
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$3.8850 / $6.3000 | Buy Now |
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Quest Components | 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET | 212 |
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$4.7025 / $8.5500 | Buy Now |
Part Details for IRFS9N60A
IRFS9N60A CAD Models
IRFS9N60A Part Data Attributes:
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IRFS9N60A
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFS9N60A
International Rectifier
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 9.2 A | |
| Drain-source On Resistance-Max | 0.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 37 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS9N60A
This table gives cross-reference parts and alternative options found for IRFS9N60A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS9N60A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFS9N60ATRRPBF | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFS9N60A vs IRFS9N60ATRRPBF |
| IRFS9N60ATRR | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRFS9N60A vs IRFS9N60ATRR |
| SIHFS9N60A-GE3 | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRFS9N60A vs SIHFS9N60A-GE3 |
| IRFS9N60ATRLPBF | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRFS9N60A vs IRFS9N60ATRLPBF |
| IRFS9N60ATRRPBF | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRFS9N60A vs IRFS9N60ATRRPBF |
| IRFS9N60ATRLPBF | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFS9N60A vs IRFS9N60ATRLPBF |
| IRFS9N60ATRLPBF | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Vishay Intertechnologies | IRFS9N60A vs IRFS9N60ATRLPBF |
| IRFS9N60APBF | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRFS9N60A vs IRFS9N60APBF |
| IRFS9N60A | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Vishay Intertechnologies | IRFS9N60A vs IRFS9N60A |
| SIHFS9N60A-GE3 | TRANSISTOR 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | IRFS9N60A vs SIHFS9N60A-GE3 |