Part Details for IRFU120PBF by International Rectifier
Overview of IRFU120PBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRFU120PBF
IRFU120PBF CAD Models
IRFU120PBF Part Data Attributes
|
IRFU120PBF
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRFU120PBF
International Rectifier
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
|
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 210 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 7.7 A | |
Drain-source On Resistance-Max | 0.27 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 42 W | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 31 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFU120PBF
This table gives cross-reference parts and alternative options found for IRFU120PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU120PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFU120 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Fairchild Semiconductor Corporation | IRFU120PBF vs IRFU120 |
SIHFU120-E3 | TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3, FET General Purpose Power | Vishay Siliconix | IRFU120PBF vs SIHFU120-E3 |
IRFU120PBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, | Vishay Intertechnologies | IRFU120PBF vs IRFU120PBF |
IRFU120 | 8.4A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Intersil Corporation | IRFU120PBF vs IRFU120 |
IRFU120 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | Samsung Semiconductor | IRFU120PBF vs IRFU120 |
IRFU120 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | International Rectifier | IRFU120PBF vs IRFU120 |