There are no models available for this part yet.
Overview of IRFZ24N by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 8 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IRFZ24N by International Rectifier
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 150 |
|
RFQ | ||||
Bristol Electronics | 134 |
|
RFQ | ||||
Bristol Electronics | 95 |
|
RFQ | ||||
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 120 |
|
$0.4375 / $0.8750 | Buy Now | ||
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 117 |
|
$0.4500 / $0.7500 | Buy Now | ||
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 68 |
|
$3.1640 / $4.7460 | Buy Now | ||
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 36 |
|
$2.8000 / $4.2000 | Buy Now | ||
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 30 |
|
$2.4188 / $4.8375 | Buy Now |
CAD Models for IRFZ24N by International Rectifier
Part Data Attributes for IRFZ24N by International Rectifier
|
|
---|---|
Pbfree Code
|
No
|
Rohs Code
|
No
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
INTERNATIONAL RECTIFIER CORP
|
Part Package Code
|
TO-220AB
|
Package Description
|
TO-220AB, 3 PIN
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Additional Feature
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas)
|
71 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE
|
DS Breakdown Voltage-Min
|
55 V
|
Drain Current-Max (ID)
|
17 A
|
Drain-source On Resistance-Max
|
0.07 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
175 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
45 W
|
Power Dissipation-Max (Abs)
|
45 W
|
Pulsed Drain Current-Max (IDM)
|
68 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRFZ24N
This table gives cross-reference parts and alternative options found for IRFZ24N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ24N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFZ24N | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRFZ24N vs IRFZ24N |
MTP15N05E | 15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | IRFZ24N vs MTP15N05E |
IRFZ24N | 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | NXP Semiconductors | IRFZ24N vs IRFZ24N |
BUZ71 | Power Field-Effect Transistor, 56A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, | Microsemi Corporation | IRFZ24N vs BUZ71 |
MTP15N05E | Power Field-Effect Transistor, 15A I(D), 50V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRFZ24N vs MTP15N05E |
BUZ71 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | IRFZ24N vs BUZ71 |
BUK453-60A | TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IRFZ24N vs BUK453-60A |
BUZ71S2 | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Siemens | IRFZ24N vs BUZ71S2 |
STP20NE06 | 20A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | IRFZ24N vs STP20NE06 |
HUF75307P3 | 15A, 55V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRFZ24N vs HUF75307P3 |
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