Part Details for IRG4PF50WD by Infineon Technologies AG
Overview of IRG4PF50WD by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IRG4PF50WD
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
3157118
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Farnell | IGBT, TO-247 RoHS: Not Compliant Min Qty: 1 Lead time: 8 Weeks, 1 Days Container: Each | 0 |
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$5.1392 / $7.3202 | Buy Now |
Part Details for IRG4PF50WD
IRG4PF50WD CAD Models
IRG4PF50WD Part Data Attributes
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IRG4PF50WD
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRG4PF50WD
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-3P, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 51 A | |
| Collector-Emitter Voltage-Max | 900 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 460 ns | |
| Turn-on Time-Nom (ton) | 121 ns |
Alternate Parts for IRG4PF50WD
This table gives cross-reference parts and alternative options found for IRG4PF50WD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PF50WD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRG4PF50WDPBF | Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRG4PF50WD vs IRG4PF50WDPBF |
| IRG4PF50WDPBF | Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRG4PF50WD vs IRG4PF50WDPBF |
| IRG4PF50WD | Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | International Rectifier | IRG4PF50WD vs IRG4PF50WD |