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Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1799
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Newark | Mosfet, N-Ch, 30V, 64A, To-263Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:64A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.012Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V, Power Dissipationrohs Compliant: Yes |Infineon IRL3103STRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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Rochester Electronics | IRL3103 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 163572 |
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$0.4400 / $0.5176 | Buy Now |
DISTI #
IRL3103STRLPBF
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TME | Transistor: N-MOSFET, unipolar, 30V, 64A, 110W, D2PAK Min Qty: 800 | 0 |
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$1.0200 | RFQ |
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Chip1Cloud | MOSFET N-CH 30V 64A D2PAK | 27000 |
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RFQ | |
DISTI #
2781150RL
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element14 Asia-Pacific | MOSFET, N-CH, 30V, 64A, TO-263AB RoHS: Compliant Min Qty: 100 Container: Reel | 0 |
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$0.6180 / $0.9240 | Buy Now |
DISTI #
2781150
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element14 Asia-Pacific | MOSFET, N-CH, 30V, 64A, TO-263AB RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$0.6180 / $1.3749 | Buy Now |
DISTI #
2781150
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Farnell | MOSFET, N-CH, 30V, 64A, TO-263AB RoHS: Compliant Min Qty: 1 Lead time: 3 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.8787 / $1.2371 | Buy Now |
DISTI #
2781150RL
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Farnell | MOSFET, N-CH, 30V, 64A, TO-263AB RoHS: Compliant Min Qty: 100 Lead time: 3 Weeks, 1 Days Container: Reel | 0 |
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$0.8787 | Buy Now |
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IRL3103STRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRL3103STRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 130 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 64 A | |
Drain-source On Resistance-Max | 0.012 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 220 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRL3103STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL3103STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRL3103STRRPBF | Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRL3103STRLPBF vs IRL3103STRRPBF |
IRL3103STRR | Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRL3103STRLPBF vs IRL3103STRR |