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Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19K8372
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Newark | N Channel Mosfet, 55V, 3.8A Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:3.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRLL2705TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 26934 |
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$0.4300 / $1.1600 | Buy Now |
DISTI #
IRLL2705TRPBF
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Avnet Americas | Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL2705TRPBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 12500 |
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$0.2529 / $0.2655 | Buy Now |
DISTI #
19K8372
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Avnet Americas | Power MOSFET, N Channel, 55 V, 5.2 A, 40 Milliohms, SOT-223 (TO-261AA), 4 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 19K8372) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 5 Days Container: Ammo Pack | 3391 Partner Stock |
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$0.6440 / $1.2700 | Buy Now |
DISTI #
IRLL2705TRPBF
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Avnet Americas | Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL2705TRPBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.2581 / $0.2666 | Buy Now |
DISTI #
70017817
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.04Ohm, ID 3.8A, SOT-223,PD 1W, VGS+/-16V,-55C | Infineon IRLL2705TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.7600 / $0.8800 | RFQ |
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Rochester Electronics | IRLL2705 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 500 |
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$0.3009 / $0.3540 | Buy Now |
DISTI #
IRLL2705TRPBF
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TME | Transistor: N-MOSFET, unipolar, 55V, 3.8A, 2.1W, SOT223 Min Qty: 1 | 1016 |
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$0.3120 / $0.7990 | Buy Now |
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Ameya Holding Limited | Single N-Channel 55 V 0.065 Ohm 48 nC HEXFET® Power Mosfet - SOT-223 | 7500 |
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RFQ | |
DISTI #
IRLL2705TRPBF
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IBS Electronics | Mosfet, Power, N-ch, Vdss 55V, Rds(on) 0.04 Ohm, Id 3.8A, SOT-223, Pd 1W, Vgs +, /-16V, -55 Min Qty: 1000 Package Multiple: 1 | 0 |
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$0.5440 | Buy Now |
DISTI #
SMC-IRLL2705TRPBF
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Sensible Micro Corporation | Trans Mosfet N-Ch Irll27 RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 1129 Container: Tape & Reel | 1800 |
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$0.1710 / $0.1852 | RFQ |
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IRLL2705TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLL2705TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 5 Days | |
Samacsys Manufacturer | Infineon | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 5.2 A | |
Drain-source On Resistance-Max | 0.051 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 92 pF | |
JEDEC-95 Code | TO-261AA | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.1 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLL2705TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL2705TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRLL2705TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | IRLL2705TRPBF vs IRLL2705TR |