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Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRLL2705PBFCT-ND
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DigiKey | MOSFET N-CH 55V 3.8A SOT223 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
272 In Stock |
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$0.3251 / $0.8700 | Buy Now |
DISTI #
IRLL2705TRPBF
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Avnet Americas | Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL2705TRPBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.2925 / $0.3576 | Buy Now |
DISTI #
IRLL2705TRPBF
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Avnet Americas | Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL2705TRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3034 / $0.3684 | Buy Now |
DISTI #
19K8372
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Avnet Americas | Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R Pb free - Product that comes on tape, but is not reeled (Alt: 19K8372) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 5 Days Container: Ammo Pack | 9216 Partner Stock |
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$0.6940 / $1.0500 | Buy Now |
DISTI #
942-IRLL2705TRPBF
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Mouser Electronics | MOSFET MOSFT 55V 3.8A 40mOhm 32nC Log Lvl RoHS: Compliant | 14860 |
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$0.3250 / $0.8700 | Buy Now |
DISTI #
70017817
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.04Ohm, ID 3.8A, SOT-223,PD 1W, VGS+/-16V,-55C | Infineon IRLL2705TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.9700 / $1.2100 | RFQ |
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Future Electronics | Single N-Channel 55 V 0.065 Ohm 48 nC HEXFET® Power Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.3200 / $0.3400 | Buy Now |
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Future Electronics | Single N-Channel 55 V 0.065 Ohm 48 nC HEXFET® Power Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.3200 / $0.3400 | Buy Now |
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Quest Components | 5.2 A, 55 V, 0.051 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA | 664 |
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$0.4650 / $1.1625 | Buy Now |
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Rochester Electronics | IRLL2705 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 500 |
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$0.3940 / $0.4635 | Buy Now |
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IRLL2705TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLL2705TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 5 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 110 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 5.2 A | |
Drain-source On Resistance-Max | 0.051 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 92 pF | |
JEDEC-95 Code | TO-261AA | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.1 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLL2705TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL2705TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRLL2705 | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | Infineon Technologies AG | IRLL2705TRPBF vs IRLL2705 |
IRLL2705PBF | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN | Infineon Technologies AG | IRLL2705TRPBF vs IRLL2705PBF |
IRLL2705PBF | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN | International Rectifier | IRLL2705TRPBF vs IRLL2705PBF |