Datasheets
IRLL2705TRPBF by:

Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN

Part Details for IRLL2705TRPBF by International Rectifier

Overview of IRLL2705TRPBF by International Rectifier

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Price & Stock for IRLL2705TRPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   767
RFQ
Bristol Electronics   580
RFQ
Quest Components 5.2 A, 55 V, 0.051 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA 179
  • 1 $0.6975
  • 35 $0.4650
  • 130 $0.3255
$0.3255 / $0.6975 Buy Now
Quest Components 5.2 A, 55 V, 0.051 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA 1009
  • 1 $3.5204
  • 370 $1.4522
  • 690 $1.3202
$1.3202 / $3.5204 Buy Now
ComSIT USA HEXFET Power MOSFET Small Signal Field-Effect Transistor RoHS: Compliant Europe - 1495
RFQ

Part Details for IRLL2705TRPBF

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IRLL2705TRPBF Part Data Attributes

IRLL2705TRPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRLL2705TRPBF International Rectifier Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-261AA
Package Description LEAD FREE, SOT-223, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 110 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 5.2 A
Drain-source On Resistance-Max 0.051 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 2.1 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for IRLL2705TRPBF

This table gives cross-reference parts and alternative options found for IRLL2705TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL2705TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLL2705 Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, Infineon Technologies AG IRLL2705TRPBF vs IRLL2705
IRLL2705PBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN Infineon Technologies AG IRLL2705TRPBF vs IRLL2705PBF
IRLL2705PBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN International Rectifier IRLL2705TRPBF vs IRLL2705PBF
IRLL2705TRPBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN Infineon Technologies AG IRLL2705TRPBF vs IRLL2705TRPBF
Part Number Description Manufacturer Compare
IRLL2705TRPBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN Infineon Technologies AG IRLL2705TRPBF vs IRLL2705TRPBF
IRLL2705PBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN International Rectifier IRLL2705TRPBF vs IRLL2705PBF
IRLL2705PBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN Infineon Technologies AG IRLL2705TRPBF vs IRLL2705PBF
IRLL2705 Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, Infineon Technologies AG IRLL2705TRPBF vs IRLL2705

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