Datasheets
IRLML5103TRPBF by:

Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3

Part Details for IRLML5103TRPBF by International Rectifier

Overview of IRLML5103TRPBF by International Rectifier

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Price & Stock for IRLML5103TRPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   21211
RFQ
Bristol Electronics   1881
RFQ
Quest Components 760 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 9632
  • 1 $0.6130
  • 2,176 $0.1226
  • 6,526 $0.1073
$0.1073 / $0.6130 Buy Now
Quest Components 760 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 27
  • 1 $0.7500
  • 8 $0.6000
$0.6000 / $0.7500 Buy Now
ComSIT USA HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Europe - 2195
RFQ
Velocity Electronics Our Stock 234
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 2500
  • 1 $1.5400
  • 100 $1.1500
  • 1,000 $1.0000
$1.0000 / $1.5400 Buy Now
Sense Electronic Company Limited SOT-23 1933
RFQ

Part Details for IRLML5103TRPBF

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IRLML5103TRPBF Part Data Attributes

IRLML5103TRPBF International Rectifier
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IRLML5103TRPBF International Rectifier Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description MICRO-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 0.76 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 0.34 W
Power Dissipation-Max (Abs) 0.28 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLML5103TRPBF

This table gives cross-reference parts and alternative options found for IRLML5103TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML5103TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLML5103 Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 International Rectifier IRLML5103TRPBF vs IRLML5103
IRLML5103PBF Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 International Rectifier IRLML5103TRPBF vs IRLML5103PBF
Part Number Description Manufacturer Compare
IRLML5103 Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 International Rectifier IRLML5103TRPBF vs IRLML5103
IRLML5103PBF Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 International Rectifier IRLML5103TRPBF vs IRLML5103PBF

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