Datasheets
IRLML6401 by:

Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3

Part Details for IRLML6401 by International Rectifier

Overview of IRLML6401 by International Rectifier

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for IRLML6401

Part # Distributor Description Stock Price Buy
Win Source Electronics Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R / HEXFET Power MOSFET 1440840
  • 590 $0.0850
  • 1,430 $0.0700
  • 2,210 $0.0680
  • 3,035 $0.0660
  • 3,970 $0.0630
  • 5,265 $0.0570
$0.0570 / $0.0850 Buy Now

Part Details for IRLML6401

IRLML6401 CAD Models

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IRLML6401 Part Data Attributes:

IRLML6401 International Rectifier
Buy Now Datasheet
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IRLML6401 International Rectifier Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description MICRO-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 33 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 125 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.3 W
Pulsed Drain Current-Max (IDM) 34 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 460 ns
Turn-on Time-Max (ton) 43 ns

Alternate Parts for IRLML6401

This table gives cross-reference parts and alternative options found for IRLML6401. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML6401, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLML6401PBF Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRLML6401 vs IRLML6401PBF
IRLML6401GTRPBF Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG IRLML6401 vs IRLML6401GTRPBF
IRLML6401TRPBF Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3 Infineon Technologies AG IRLML6401 vs IRLML6401TRPBF
IRLML6401TR Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 International Rectifier IRLML6401 vs IRLML6401TR
Part Number Description Manufacturer Compare
IRLML6401TR Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 International Rectifier IRLML6401 vs IRLML6401TR
IRLML6401PBF Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRLML6401 vs IRLML6401PBF
IRLML6401TRPBF Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3 Infineon Technologies AG IRLML6401 vs IRLML6401TRPBF
IRLML6401GTRPBF Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG IRLML6401 vs IRLML6401GTRPBF

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