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Transistors / Power Field-Effect Transistors / IRLR014PBF
Datasheets
IRLR014PBF by:

Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,

Part Details for IRLR014PBF by Vishay Intertechnologies

Overview of IRLR014PBF by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRLR014PBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7618
Newark N Channel Mosfet, 60V, 7.7A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:7.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay IRLR014PBF Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # IRLR014PBF
Avnet Americas Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK - Bulk (Alt: IRLR014PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Bulk 0
  • 3,000 $0.4941
  • 6,000 $0.4783
  • 12,000 $0.4624
  • 18,000 $0.4466
  • 24,000 $0.4293
  • 30,000 $0.4091
  • 300,000 $0.3889
$0.3889 / $0.4941 Buy Now
DISTI # 844-IRLR014PBF
Mouser Electronics MOSFET RECOMMENDED ALT IRLR014 RoHS: Compliant 34014
  • 1 $0.9000
  • 10 $0.6460
  • 100 $0.5390
  • 500 $0.4830
  • 1,000 $0.3960
  • 3,000 $0.3750
$0.3750 / $0.9000 Buy Now
Future Electronics Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 3100
Tube
  • 1 $0.3900
  • 125 $0.3750
  • 400 $0.3600
  • 1,500 $0.3450
  • 5,000 $0.3200
$0.3200 / $0.3900 Buy Now
Future Electronics Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube 0
Tube
  • 1 $0.3900
  • 125 $0.3750
  • 400 $0.3600
  • 1,500 $0.3450
  • 5,000 $0.3200
$0.3200 / $0.3900 Buy Now
Quest Components   346
  • 1 $1.8300
  • 56 $0.9150
  • 220 $0.7320
$0.7320 / $1.8300 Buy Now
DISTI # IRLR014PBF
TTI MOSFET RECOMMENDED ALT IRLR014 RoHS: Compliant pbFree: Pb-Free Min Qty: 75 Package Multiple: 75 Container: Tube Americas - 6000
In Stock
  • 75 $0.4200
  • 150 $0.4090
  • 525 $0.4000
  • 1,050 $0.3920
  • 2,025 $0.3840
  • 5,025 $0.3770
  • 10,050 $0.3690
$0.3690 / $0.4200 Buy Now
DISTI # IRLR014PBF
Avnet Americas Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK - Bulk (Alt: IRLR014PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Bulk 0
  • 3,000 $0.4941
  • 6,000 $0.4783
  • 12,000 $0.4624
  • 18,000 $0.4466
  • 24,000 $0.4293
  • 30,000 $0.4091
  • 300,000 $0.3889
$0.3889 / $0.4941 Buy Now
DISTI # IRLR014PBF
TME Transistor: N-MOSFET, unipolar, 60V, 7.7A, Idm: 31A, 25W, DPAK,TO252 Min Qty: 1 2987
  • 1 $0.6870
  • 10 $0.4110
  • 75 $0.3720
  • 300 $0.3280
  • 750 $0.2930
  • 3,000 $0.2640
$0.2640 / $0.6870 Buy Now
DISTI # IRLR014PBF
Avnet Americas Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK - Bulk (Alt: IRLR014PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Bulk 0
  • 3,000 $0.4941
  • 6,000 $0.4783
  • 12,000 $0.4624
  • 18,000 $0.4466
  • 24,000 $0.4293
  • 30,000 $0.4091
  • 300,000 $0.3889
$0.3889 / $0.4941 Buy Now
DISTI # IRLR014PBF
EBV Elektronik Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK (Alt: IRLR014PBF) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now

Part Details for IRLR014PBF

IRLR014PBF CAD Models

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IRLR014PBF Part Data Attributes

Parametric Data
IRLR014PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRLR014PBF Vishay Intertechnologies Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 7.7 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLR014PBF

This table gives cross-reference parts and alternative options found for IRLR014PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR014PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRLR014PBF vs IRLR014
IRLR014TR Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014PBF vs IRLR014TR
IRLR014TRR Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014PBF vs IRLR014TRR
IRLR014 Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRLR014PBF vs IRLR014
IRLR014TRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRLR014PBF vs IRLR014TRPBF
IRLR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRLR014PBF vs IRLR014TRLPBF
IRLR014PBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR014PBF vs IRLR014PBF
IRLR014TRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRLR014PBF vs IRLR014TRPBF
IRLR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRLR014PBF vs IRLR014TRLPBF
IRLR014TRL Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014PBF vs IRLR014TRL
Part Number Description Manufacturer Compare
IRLR014TR Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014PBF vs IRLR014TR
IRLR014TRR Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014PBF vs IRLR014TRR
IRLR014TRL Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014PBF vs IRLR014TRL
IRLR014 Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRLR014PBF vs IRLR014
IRLR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRLR014PBF vs IRLR014TRLPBF
IRLR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRLR014PBF vs IRLR014
IRLR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRLR014PBF vs IRLR014TRLPBF
IRLR014PBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR014PBF vs IRLR014PBF
IRLR014TRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRLR014PBF vs IRLR014TRPBF
IRLR014TRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRLR014PBF vs IRLR014TRPBF

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