Part Details for IS61DDP2B21M18A-400M3L by Integrated Silicon Solution Inc
Overview of IS61DDP2B21M18A-400M3L by Integrated Silicon Solution Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IS61DDP2B21M18A-400M3L
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IS61DDP2B21M18A-40
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Avnet Americas | SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA - Bulk (Alt: IS61DDP2B21M18A-40) RoHS: Not Compliant Min Qty: 105 Package Multiple: 105 Lead time: 30 Weeks, 0 Days Container: Bulk | 0 |
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RFQ | |
DISTI #
870-612B21M18A400M3L
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Mouser Electronics | SRAM 18Mb, DDR IIP (Burst of 2) CIO, Sync SRAM, 1M x 18, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS RoHS: Compliant | 0 |
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$40.5400 | Order Now |
Part Details for IS61DDP2B21M18A-400M3L
IS61DDP2B21M18A-400M3L CAD Models
IS61DDP2B21M18A-400M3L Part Data Attributes
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IS61DDP2B21M18A-400M3L
Integrated Silicon Solution Inc
Buy Now
Datasheet
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IS61DDP2B21M18A-400M3L
Integrated Silicon Solution Inc
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
Part Package Code | BGA | |
Package Description | LBGA, | |
Pin Count | 165 | |
Reach Compliance Code | compliant | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Factory Lead Time | 30 Weeks | |
Access Time-Max | 0.45 ns | |
JESD-30 Code | R-PBGA-B165 | |
Length | 17 mm | |
Memory Density | 18874368 bit | |
Memory IC Type | DDR SRAM | |
Memory Width | 18 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 1MX18 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Seated Height-Max | 1.4 mm | |
Supply Voltage-Max (Vsup) | 1.89 V | |
Supply Voltage-Min (Vsup) | 1.71 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 15 mm |
Alternate Parts for IS61DDP2B21M18A-400M3L
This table gives cross-reference parts and alternative options found for IS61DDP2B21M18A-400M3L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS61DDP2B21M18A-400M3L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CY7C1394V18-200BZC | DDR SRAM, 512KX36, 0.38ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165 | Cypress Semiconductor | IS61DDP2B21M18A-400M3L vs CY7C1394V18-200BZC |
CY7C1317V18-250BZC | DDR SRAM, 2MX8, 0.35ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165 | Cypress Semiconductor | IS61DDP2B21M18A-400M3L vs CY7C1317V18-250BZC |
HY67V36400BG-7 | Standard SRAM, 128KX36, CMOS, PBGA119, BGA-119 | SK Hynix Inc | IS61DDP2B21M18A-400M3L vs HY67V36400BG-7 |
MCM69L737AZP7.5R | Cache SRAM, 128KX36, 7.5ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 | Motorola Semiconductor Products | IS61DDP2B21M18A-400M3L vs MCM69L737AZP7.5R |
IS61NLF12832-10B | ZBT SRAM, 128KX32, 10ns, CMOS, PBGA119, PLASTIC, BGA-119 | Integrated Silicon Solution Inc | IS61DDP2B21M18A-400M3L vs IS61NLF12832-10B |
KM736V795T-72T | Cache SRAM, 128KX36, 4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | Samsung Semiconductor | IS61DDP2B21M18A-400M3L vs KM736V795T-72T |
MCM69F817ZP6.5R | 256KX18 CACHE SRAM, 6.5ns, PBGA119, 7 X 17 MM, PLASTIC, BGA-119 | Motorola Mobility LLC | IS61DDP2B21M18A-400M3L vs MCM69F817ZP6.5R |
AS7C332MNTF18A-85BCN | ZBT SRAM, 2MX18, 8.5ns, CMOS, PBGA165, LEAD FREE, BGA-165 | Alliance Semiconductor Corporation | IS61DDP2B21M18A-400M3L vs AS7C332MNTF18A-85BCN |
IS61VPS10018-166TQ | Cache SRAM, 1MX18, 3.5ns, CMOS, PQFP100, TQFP-100 | Integrated Silicon Solution Inc | IS61DDP2B21M18A-400M3L vs IS61VPS10018-166TQ |
MCM69R821AZP4.2 | Cache SRAM, 256KX18, 5.5ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 | Motorola Semiconductor Products | IS61DDP2B21M18A-400M3L vs MCM69R821AZP4.2 |