Part Details for IXFH20N80Q by IXYS Corporation
Overview of IXFH20N80Q by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFH20N80Q
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K3170
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Newark | Mosfet, N-Ch, 800V, 20A, 150Deg C, 360W, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:20A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Ixys Semiconductor IXFH20N80Q Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 800V, 0.42OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD | 5 |
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$7.4700 / $14.9400 | Buy Now |
Part Details for IXFH20N80Q
IXFH20N80Q CAD Models
IXFH20N80Q Part Data Attributes:
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IXFH20N80Q
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFH20N80Q
IXYS Corporation
Power Field-Effect Transistor, 20A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.42 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 360 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH20N80Q
This table gives cross-reference parts and alternative options found for IXFH20N80Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH20N80Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| F10F6N | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | IXFH20N80Q vs F10F6N |
| NDP606BE | 42A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | IXFH20N80Q vs NDP606BE |
| STP9NK65Z | N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET | STMicroelectronics | IXFH20N80Q vs STP9NK65Z |
| IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | IXFH20N80Q vs IXFH12N100F |
| IPD90N06S306ATMA1 | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | Infineon Technologies AG | IXFH20N80Q vs IPD90N06S306ATMA1 |
| FQA30N40 | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | IXFH20N80Q vs FQA30N40 |
| SSP10N60B | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXFH20N80Q vs SSP10N60B |
| BUK9614-30 | 69A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | IXFH20N80Q vs BUK9614-30 |
| FDP8878 | Power Field-Effect Transistor, 40A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Fairchild Semiconductor Corporation | IXFH20N80Q vs FDP8878 |
| FQPF6N80 | Power Field-Effect Transistor, 3.3A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | IXFH20N80Q vs FQPF6N80 |