Part Details for IXFH4N100Q by IXYS Corporation
Overview of IXFH4N100Q by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFH4N100Q
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFH4N100Q-ND
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DigiKey | MOSFET N-CH 1000V 4A TO247AD Lead time: 98 Weeks Container: Tube | Temporarily Out of Stock |
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Buy Now | |
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DISTI #
747-IXFH4N100Q
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Mouser Electronics | MOSFET 4 Amps 1000V 2.8 Rds RoHS: Compliant | 0 |
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Order Now |
Part Details for IXFH4N100Q
IXFH4N100Q CAD Models
IXFH4N100Q Part Data Attributes
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IXFH4N100Q
IXYS Corporation
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Datasheet
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Compare Parts:
IXFH4N100Q
IXYS Corporation
Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH4N100Q
This table gives cross-reference parts and alternative options found for IXFH4N100Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH4N100Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFS620 | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IXFH4N100Q vs IRFS620 |
| SPP47N10 | Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IXFH4N100Q vs SPP47N10 |
| IXFH14N80 | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | IXFH4N100Q vs IXFH14N80 |
| STP13NK50Z | 11A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | IXFH4N100Q vs STP13NK50Z |
| RFD14N06 | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | IXFH4N100Q vs RFD14N06 |
| SPP80N06S2L-06 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IXFH4N100Q vs SPP80N06S2L-06 |
| STW20NM60FD | N-CHANNEL 600V 0.26 Ohm 20A TO-247 FDmesh™ POWER MOSFET | STMicroelectronics | IXFH4N100Q vs STW20NM60FD |
| IXFH28N50Q | Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXYS Corporation | IXFH4N100Q vs IXFH28N50Q |
| IXFH26N50S | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247SMD, 3 PIN | IXYS Corporation | IXFH4N100Q vs IXFH26N50S |
| IXTK33N50 | Power Field-Effect Transistor, 33A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | Littelfuse Inc | IXFH4N100Q vs IXTK33N50 |