Part Details for IXFH52N30P by Littelfuse Inc
Overview of IXFH52N30P by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFH52N30P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFH52N30P-ND
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DigiKey | MOSFET N-CH 300V 52A TO247AD Min Qty: 1 Lead time: 40 Weeks Container: Tube |
550 In Stock |
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$3.9950 / $7.5200 | Buy Now |
Part Details for IXFH52N30P
IXFH52N30P CAD Models
IXFH52N30P Part Data Attributes
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IXFH52N30P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFH52N30P
Littelfuse Inc
Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 52 A | |
| Drain-source On Resistance-Max | 0.066 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 400 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH52N30P
This table gives cross-reference parts and alternative options found for IXFH52N30P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH52N30P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTQ52N30P | Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXYS Corporation | IXFH52N30P vs IXTQ52N30P |
| IXTT52N30P | Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXFH52N30P vs IXTT52N30P |
| IXTQ52N30P | Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Littelfuse Inc | IXFH52N30P vs IXTQ52N30P |
| IXFT52N30P | Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXFH52N30P vs IXFT52N30P |
| APT30M70BVRG | Power Field-Effect Transistor, 48A I(D), 300V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | IXFH52N30P vs APT30M70BVRG |
| APT30M61SFLLG | Power Field-Effect Transistor, 54A I(D), 300V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFH52N30P vs APT30M61SFLLG |
| IXFX52N30Q | Power Field-Effect Transistor, 52A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, 3 PIN | IXYS Corporation | IXFH52N30P vs IXFX52N30Q |
| IXTH50N30 | Power Field-Effect Transistor, 50A I(D), 300V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | IXFH52N30P vs IXTH50N30 |
| APT30M61BLLG | Power Field-Effect Transistor, 54A I(D), 300V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | IXFH52N30P vs APT30M61BLLG |
| APT30M61SLLG/TR | Power Field-Effect Transistor, 54A I(D), 300V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFH52N30P vs APT30M61SLLG/TR |