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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0750
|
Newark | Discmsft Nchtrenchgategen1 Sot-227B(Mini/Tube |Littelfuse IXFN360N10T Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$21.3800 / $25.0400 | Buy Now |
DISTI #
IXFN360N10T-ND
|
DigiKey | MOSFET N-CH 100V 360A SOT-227B Min Qty: 1 Lead time: 27 Weeks Container: Tube | Temporarily Out of Stock |
|
$18.3631 / $27.6900 | Buy Now |
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IXFN360N10T
Littelfuse Inc
Buy Now
Datasheet
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IXFN360N10T
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 3000 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 360 A | |
Drain-source On Resistance-Max | 0.0026 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 400 pF | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 830 W | |
Pulsed Drain Current-Max (IDM) | 900 A | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | Nickel (Ni) | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXFN360N10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN360N10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXUN280N10 | Power Field-Effect Transistor, 280A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN360N10T vs IXUN280N10 |
IXFN360N10T | Power Field-Effect Transistor, 360A I(D), 100V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN360N10T vs IXFN360N10T |