Part Details for IXFP7N100P by IXYS Corporation
Overview of IXFP7N100P by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFP7N100P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFP7N100P-ND
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DigiKey | MOSFET N-CH 1000V 7A TO220AB Min Qty: 300 Lead time: 46 Weeks Container: Tube |
300 In Stock |
|
$3.2909 | Buy Now |
DISTI #
747-IXFP7N100P
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Mouser Electronics | MOSFETs 7 Amps 1000V RoHS: Compliant | 0 |
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$3.3000 / $6.0200 | Order Now |
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Future Electronics | N-Channel 1000 V 7 A 1.9 Ω Flange Mount Polar HiPerFET Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Lead time: 46 Weeks Container: Tube | 0Tube |
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$3.1300 / $3.4200 | Buy Now |
DISTI #
IXFP7N100P
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TTI | MOSFETs 7 Amps 1000V Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$3.1300 / $3.3200 | Buy Now |
DISTI #
IXFP7N100P
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TME | Transistor: N-MOSFET, Polar™, unipolar, 1kV, 7A, 300W, TO220AB Min Qty: 1 | 258 |
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$3.8300 / $5.1700 | Buy Now |
Part Details for IXFP7N100P
IXFP7N100P CAD Models
IXFP7N100P Part Data Attributes
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IXFP7N100P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFP7N100P
IXYS Corporation
Power Field-Effect Transistor, 7A I(D), 1000V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-220AB | |
Package Description | PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 300 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 1.9 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFP7N100P
This table gives cross-reference parts and alternative options found for IXFP7N100P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFP7N100P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXFP7N100P | Power Field-Effect Transistor, 7A I(D), 1000V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFP7N100P vs IXFP7N100P |