Part Details for IXFQ26N50Q by IXYS Corporation
Overview of IXFQ26N50Q by IXYS Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IXFQ26N50Q
IXFQ26N50Q CAD Models
IXFQ26N50Q Part Data Attributes
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IXFQ26N50Q
IXYS Corporation
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Datasheet
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IXFQ26N50Q
IXYS Corporation
Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-3P | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 26 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 104 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | PURE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFQ26N50Q
This table gives cross-reference parts and alternative options found for IXFQ26N50Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFQ26N50Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXFH32N50S | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXYS Corporation | IXFQ26N50Q vs IXFH32N50S |
APT5020BFLC | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Advanced Power Technology | IXFQ26N50Q vs APT5020BFLC |
APT5015BLC | 32A, 500V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | Microsemi Corporation | IXFQ26N50Q vs APT5015BLC |
IXTT28N50Q | Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXYS Corporation | IXFQ26N50Q vs IXTT28N50Q |
IRFBA31N50LPBF | Power Field-Effect Transistor, 31A I(D), 500V, 0.152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-220, 4 PIN | Infineon Technologies AG | IXFQ26N50Q vs IRFBA31N50LPBF |
APT6030BVFRG | Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Microsemi Corporation | IXFQ26N50Q vs APT6030BVFRG |
IXTH30N45 | Power Field-Effect Transistor, 30A I(D), 450V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | IXYS Corporation | IXFQ26N50Q vs IXTH30N45 |
SIHG32N50D-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | IXFQ26N50Q vs SIHG32N50D-GE3 |
APT5020SLC | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | Advanced Power Technology | IXFQ26N50Q vs APT5020SLC |
SIHG32N50D-GE3 | Power Field-Effect Transistor, 30A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | Vishay Intertechnologies | IXFQ26N50Q vs SIHG32N50D-GE3 |