There are no models available for this part yet.
Overview of IXFR44N50Q by Littelfuse Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IXFR44N50Q by Littelfuse Inc
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
03AH0899
|
Newark | Discmsft Nch Hiperfet-Q Class Isoplus247/ Tube |Littelfuse IXFR44N50Q RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$15.9600 | Buy Now | |
DISTI #
IXFR44N50Q-ND
|
DigiKey | MOSFET N-CH 500V 34A ISOPLUS247 Min Qty: 300 Lead time: 44 Weeks Container: Tube | Temporarily Out of Stock |
|
$17.2215 | Buy Now |
CAD Models for IXFR44N50Q by Littelfuse Inc
Part Data Attributes for IXFR44N50Q by Littelfuse Inc
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Not Recommended
|
Ihs Manufacturer
|
LITTELFUSE INC
|
Package Description
|
IN-LINE, R-PSIP-T3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
LITTELFUSE
|
Additional Feature
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas)
|
2500 mJ
|
Case Connection
|
ISOLATED
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
500 V
|
Drain Current-Max (ID)
|
34 A
|
Drain-source On Resistance-Max
|
0.12 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PSIP-T3
|
JESD-609 Code
|
e1
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
IN-LINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
310 W
|
Pulsed Drain Current-Max (IDM)
|
176 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
10
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
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