Parametric results for: IXFR44N50Q under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 4

4 hits Apply

1500.0 mJ 2 2500.0 mJ 2

Min (mJ) - Max (mJ)

4 hits Apply

ISOLATED 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

500 V 4

4 hits Apply

Drain Current-Max (ID) (2)

25 A 2 34 A 2

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (2)

120 mΩ 2 154 mΩ 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

56 pF 1

4 hits Apply

R-PSIP-T3 4

4 hits Apply

e1 4

4 hits Apply

Manufacturer (2)

IXYS Corporation 2 Littelfuse Inc 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

-55.0 °C 1

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

IN-LINE 4

4 hits Apply

Active 1 Not Recommended 1 Transferred 2

4 hits Apply

Yes 1

4 hits Apply

260 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

300 W 2 310 W 2

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply