Part Details for IXFR64N50P by Littelfuse Inc
Overview of IXFR64N50P by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for IXFR64N50P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0905
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Newark | Discmosfetn-Ch Hiperfet-Polar Isoplus247/ Tube |Littelfuse IXFR64N50P Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$12.1000 / $13.0200 | Buy Now |
Part Details for IXFR64N50P
IXFR64N50P CAD Models
IXFR64N50P Part Data Attributes:
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IXFR64N50P
Littelfuse Inc
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Datasheet
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Compare Parts:
IXFR64N50P
Littelfuse Inc
Power Field-Effect Transistor, 37A I(D), 500V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, ISOPLUS247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 37 A | |
| Drain-source On Resistance-Max | 0.095 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFR64N50P
This table gives cross-reference parts and alternative options found for IXFR64N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFR64N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFR50N50 | Power Field-Effect Transistor, 43A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | IXYS Corporation | IXFR64N50P vs IXFR50N50 |
| VUM25-05E | Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Littelfuse Inc | IXFR64N50P vs VUM25-05E |
| IXFR44N50F | Power Field-Effect Transistor, 38A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | IXYS Corporation | IXFR64N50P vs IXFR44N50F |
| VMO40-05P1 | Power Field-Effect Transistor, 41A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ECOPAC-4 | Littelfuse Inc | IXFR64N50P vs VMO40-05P1 |
| APT38F50J | Power Field-Effect Transistor, 38A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFR64N50P vs APT38F50J |
| SGS35MA050D1 | 35A, 500V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240 | STMicroelectronics | IXFR64N50P vs SGS35MA050D1 |
| APT38M50J | Power Field-Effect Transistor, 38A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFR64N50P vs APT38M50J |
| VUM25-05E | Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | IXYS Corporation | IXFR64N50P vs VUM25-05E |