Part Details for IXGH48N60B3 by IXYS Corporation
Overview of IXGH48N60B3 by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXGH48N60B3
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 56 |
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RFQ | ||
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Quest Components | 44 |
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$10.7167 / $13.0338 | Buy Now | |
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Ameya Holding Limited | Min Qty: 16 | 114 |
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$14.6283 / $15.3970 | Buy Now |
Part Details for IXGH48N60B3
IXGH48N60B3 CAD Models
IXGH48N60B3 Part Data Attributes
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IXGH48N60B3
IXYS Corporation
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Datasheet
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IXGH48N60B3
IXYS Corporation
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 48 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 200 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 400 ns | |
| Turn-off Time-Nom (toff) | 246 ns | |
| Turn-on Time-Nom (ton) | 47 ns | |
| VCEsat-Max | 1.8 V |
Alternate Parts for IXGH48N60B3
This table gives cross-reference parts and alternative options found for IXGH48N60B3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXGH48N60B3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXGR40N60B | Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN | IXYS Corporation | IXGH48N60B3 vs IXGR40N60B |
| IXGH25N120 | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXGH48N60B3 vs IXGH25N120 |
| IXXH50N60B3D1 | Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXGH48N60B3 vs IXXH50N60B3D1 |
| IXGH12N100AU1 | Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXGH48N60B3 vs IXGH12N100AU1 |
| IXGH45N120 | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXGH48N60B3 vs IXGH45N120 |
| IXGH12N90C | Insulated Gate Bipolar Transistor, 24A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN | IXYS Corporation | IXGH48N60B3 vs IXGH12N90C |
| IXGA15N100C | Insulated Gate Bipolar Transistor, 30A I(C), 1000V V(BR)CES, N-Channel, TO-263AA, D2PAK-3 | IXYS Corporation | IXGH48N60B3 vs IXGA15N100C |
| IXGH40N60A3D1 | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXGH48N60B3 vs IXGH40N60A3D1 |
| IXDP20N60B | Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXGH48N60B3 vs IXDP20N60B |
| IXGA20N100 | Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel, TO-263AA, TO-263AA, 3 PIN | IXYS Corporation | IXGH48N60B3 vs IXGA20N100 |