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Insulated Gate Bipolar Transistor,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1185
|
Newark | Disc Igbt Pt-Mid Frequency To-268Aa/ Tube |Littelfuse IXGT30N120B3D1 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$13.0300 / $14.0200 | Buy Now |
|
Future Electronics | IGBT DISCRETE RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
|
$13.9200 / $14.2200 | Buy Now |
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IXGT30N120B3D1
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXGT30N120B3D1
Littelfuse Inc
Insulated Gate Bipolar Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | TO-268, 3 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 30 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 380 ns | |
Gate-Emitter Thr Voltage-Max | 5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-268AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 580 ns | |
Turn-off Time-Nom (toff) | 331 ns | |
Turn-on Time-Nom (ton) | 53 ns | |
VCEsat-Max | 3.5 V |