Part Details for IXTK120N25P by Littelfuse Inc
Overview of IXTK120N25P by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for IXTK120N25P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXTK120N25P-ND
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DigiKey | MOSFET N-CH 250V 120A TO264 Min Qty: 1 Lead time: 24 Weeks Container: Tube | Temporarily Out of Stock |
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$9.7601 / $15.4100 | Buy Now |
Part Details for IXTK120N25P
IXTK120N25P CAD Models
IXTK120N25P Part Data Attributes
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IXTK120N25P
Littelfuse Inc
Buy Now
Datasheet
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IXTK120N25P
Littelfuse Inc
Power Field-Effect Transistor, 120A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2.5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.024 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 700 W | |
| Pulsed Drain Current-Max (IDM) | 300 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTK120N25P
This table gives cross-reference parts and alternative options found for IXTK120N25P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTK120N25P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFK120N25P | Power Field-Effect Transistor, 120A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN | Littelfuse Inc | IXTK120N25P vs IXFK120N25P |
| IXTD110N25T-8W | Power Field-Effect Transistor, 110A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Littelfuse Inc | IXTK120N25P vs IXTD110N25T-8W |
| IXFK120N25P | Power Field-Effect Transistor, 120A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN | IXYS Corporation | IXTK120N25P vs IXFK120N25P |
| IXTX120N25P | Power Field-Effect Transistor, 120A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXYS Corporation | IXTK120N25P vs IXTX120N25P |
| IXFX1871 | Power Field-Effect Transistor, 120A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | Littelfuse Inc | IXTK120N25P vs IXFX1871 |
| IXFV110N25TS | Power Field-Effect Transistor, 110A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN | IXYS Corporation | IXTK120N25P vs IXFV110N25TS |
| IXTH110N25T | Power Field-Effect Transistor, 110A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXTK120N25P vs IXTH110N25T |
| IXTV110N25TS | Power Field-Effect Transistor, 110A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN | IXYS Corporation | IXTK120N25P vs IXTV110N25TS |
| IXTK120N25P | Power Field-Effect Transistor, 120A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN | IXYS Corporation | IXTK120N25P vs IXTK120N25P |
| IXFK120N25 | Power Field-Effect Transistor, 120A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, | IXYS Corporation | IXTK120N25P vs IXFK120N25 |