Part Details for IXTY44N10T by IXYS Corporation
Overview of IXTY44N10T by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IXTY44N10T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTY44N10T
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Mouser Electronics | MOSFETs 44 Amps 100V 25.0 Rds RoHS: Compliant | 1189 |
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$1.0700 / $2.4600 | Buy Now |
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Future Electronics | N-Channel 100 V 30 mOhm Surface Mount TrenchMV Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 490 Package Multiple: 70 Lead time: 27 Weeks Container: Tube | 0Tube |
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$1.0900 / $1.2000 | Buy Now |
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DISTI #
IXTY44N10T
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TTI | MOSFETs 44 Amps 100V 25.0 Rds Min Qty: 350 Package Multiple: 70 Container: Tube | Americas - 0 |
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$1.0600 / $1.3900 | Buy Now |
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DISTI #
IXTY44N10T
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TME | Transistor: N-MOSFET, unipolar, 100V, 44A, 130W, TO252, 60ns Min Qty: 1 | 240 |
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$1.4800 / $2.0800 | Buy Now |
Part Details for IXTY44N10T
IXTY44N10T CAD Models
IXTY44N10T Part Data Attributes
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IXTY44N10T
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTY44N10T
IXYS Corporation
Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-252AA | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 44 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 47 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTY44N10T
This table gives cross-reference parts and alternative options found for IXTY44N10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTY44N10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFN3710-JQR-B | 45A, 100V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IXTY44N10T vs IRFN3710-JQR-B |
| HUF75637SMD05R | Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN | TT Electronics Resistors | IXTY44N10T vs HUF75637SMD05R |
| IRF5N3710SCX | Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Infineon Technologies AG | IXTY44N10T vs IRF5N3710SCX |
| HUF75637SMD05 | Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN | TT Electronics Resistors | IXTY44N10T vs HUF75637SMD05 |
| 934057747127 | 49A, 100V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | NXP Semiconductors | IXTY44N10T vs 934057747127 |
| SNN4010D | 45A, 100V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, 3/2 PIN | Kodenshi Sensing | IXTY44N10T vs SNN4010D |
| IXTY44N10T | Power Field-Effect Transistor, | Littelfuse Inc | IXTY44N10T vs IXTY44N10T |