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Transistors / Power Field-Effect Transistors / IXTY44N10T
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IXTY44N10T by:

Power Field-Effect Transistor,

Part Details for IXTY44N10T by Littelfuse Inc

Overview of IXTY44N10T by Littelfuse Inc

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Applications Automotive

Price & Stock for IXTY44N10T

Part # Distributor Description Stock Price Buy
DISTI # 03AH1932
Newark Mosfet, N-Ch, 100V, 44A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:44A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTY44N10T Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 288
  • 1 $2.5300
  • 25 $2.2800
  • 100 $2.0400
  • 250 $1.6700
  • 500 $1.5500
  • 1,000 $1.4100
  • 2,500 $1.1400
$1.1400 / $2.5300 Buy Now
DISTI # IXTY44N10T-ND
DigiKey MOSFET N-CH 100V 44A TO252 Min Qty: 1 Lead time: 27 Weeks Container: Tube 350
In Stock
  • 1 $2.4800
  • 70 $1.9956
  • 140 $1.6420
  • 560 $1.3894
  • 1,050 $1.1788
  • 2,030 $1.1199
  • 5,040 $1.0778
$1.0778 / $2.4800 Buy Now

Part Details for IXTY44N10T

IXTY44N10T Part Data Attributes

Parametric Data
IXTY44N10T Littelfuse Inc
Buy Now Datasheet
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IXTY44N10T Littelfuse Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description ,
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 47 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 130 W
Pulsed Drain Current-Max (IDM) 110 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTY44N10T

This table gives cross-reference parts and alternative options found for IXTY44N10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTY44N10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75637SMD05R Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN TT Electronics Resistors IXTY44N10T vs HUF75637SMD05R
SHD239601 Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN Sensitron Semiconductors IXTY44N10T vs SHD239601
IRF5N3710PBF Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN Infineon Technologies AG IXTY44N10T vs IRF5N3710PBF
934057747127 49A, 100V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors IXTY44N10T vs 934057747127
IRF5N3710SCV Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN Infineon Technologies AG IXTY44N10T vs IRF5N3710SCV
IRFN3710-JQR-B 45A, 100V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IXTY44N10T vs IRFN3710-JQR-B
HUF75637SMD05 Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN TT Electronics Resistors IXTY44N10T vs HUF75637SMD05
HUF75637SMD05 44A, 100V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IXTY44N10T vs HUF75637SMD05
IXTP44N10T Power Field-Effect Transistor, Littelfuse Inc IXTY44N10T vs IXTP44N10T
IRFN3710-JQR-B Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors IXTY44N10T vs IRFN3710-JQR-B

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