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IXXR100N60B3H1 by:

Insulated Gate Bipolar Transistor,

Part Details for IXXR100N60B3H1 by Littelfuse Inc

Overview of IXXR100N60B3H1 by Littelfuse Inc

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Price & Stock for IXXR100N60B3H1

Part # Distributor Description Stock Price Buy
DISTI # 03AH1994
Newark Disc Igbt Xpt-Genx3 Isoplus247/ Tube |Littelfuse IXXR100N60B3H1 Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $17.6800
  • 500 $16.4300
$16.4300 / $17.6800 Buy Now

Part Details for IXXR100N60B3H1

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IXXR100N60B3H1 Part Data Attributes

IXXR100N60B3H1 Littelfuse Inc
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IXXR100N60B3H1 Littelfuse Inc Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Case Connection ISOLATED
Collector Current-Max (IC) 145 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 400 W
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 350 ns
Turn-on Time-Nom (ton) 92 ns
VCEsat-Max 1.8 V

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