Part Details for JAN1N5621US by Microchip Technology Inc
Overview of JAN1N5621US by Microchip Technology Inc
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JAN1N5621US
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
35AJ7011
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Newark | Ufr, frr A-Body Sq. Melf Rohs Compliant: Yes |Microchip JAN1N5621US Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$7.0900 / $7.3700 | Buy Now |
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DISTI #
JAN1N5621US
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Avnet Americas | Diode Fast Recovery Rectifier 800V 1A 2-Pin A-MELF - Bulk (Alt: JAN1N5621US) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Bulk | 0 |
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$7.0900 / $7.9400 | Buy Now |
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DISTI #
JAN1N5621US
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Microchip Technology Inc | UFR,FRR _ A-Body Sq. Melf, Projected EOL: 2049-02-05 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
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$7.9400 | Buy Now |
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Onlinecomponents.com | Diode - Standard - 800V - 1A - 1.6 V @ 3 A Forward (Vf) (Max) @ If - Fast Recovery =< 500ns, > 200mA (Io) - D-5A Package - Surface Mount. RoHS: Compliant | 0 |
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$7.7800 / $11.3400 | Buy Now |
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NAC | Rectifier RoHS: Compliant Min Qty: 44 Package Multiple: 1 | 0 |
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$6.9100 / $8.3400 | Buy Now |
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Master Electronics | Diode - Standard - 800V - 1A - 1.6 V @ 3 A Forward (Vf) (Max) @ If - Fast Recovery =< 500ns, > 200mA (Io) - D-5A Package - Surface Mount. RoHS: Compliant | 0 |
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$7.7800 / $11.3400 | Buy Now |
Part Details for JAN1N5621US
JAN1N5621US CAD Models
JAN1N5621US Part Data Attributes
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JAN1N5621US
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
JAN1N5621US
Microchip Technology Inc
Rectifier Diode, 1 Phase, 1 Element, 1A, Silicon
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | HERMETIC SEALED, GLASS PACKAGE-2 | |
| Reach Compliance Code | compliant | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| JESD-30 Code | O-LELF-R2 | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Output Current-Max | 1 A | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/429J | |
| Reverse Recovery Time-Max | 0.3 µs | |
| Surface Mount | YES | |
| Terminal Form | WRAP AROUND | |
| Terminal Position | END |
Alternate Parts for JAN1N5621US
This table gives cross-reference parts and alternative options found for JAN1N5621US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N5621US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SGL41-30HE3/96 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, MELF-2 | Vishay Intertechnologies | JAN1N5621US vs SGL41-30HE3/96 |
| EGL41G | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, | General Instrument Corp | JAN1N5621US vs EGL41G |
| BYM12-300-E3/97 | Rectifier Diode, 1 Phase, 1 Element, 1A, 300V V(RRM), Silicon, DO-213AB, | Vishay Intertechnologies | JAN1N5621US vs BYM12-300-E3/97 |
| EGL41D-E3/97 | Rectifier Diode, 1 Phase, 1 Element, 1A, 200V V(RRM), Silicon, DO-213AB, | Vishay Intertechnologies | JAN1N5621US vs EGL41D-E3/97 |
| EGL41G-E3/97 | Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-213AB, | Vishay Intertechnologies | JAN1N5621US vs EGL41G-E3/97 |
| 1N5621UL | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, MELF-2 | Sensitron Semiconductors | JAN1N5621US vs 1N5621UL |
| LL4937G | Rectifier Diode, 1 Element, 1A, Silicon, | International Semiconductor Inc | JAN1N5621US vs LL4937G |
| BYM12-150HE3_A/I | Rectifier Diode, | Vishay Intertechnologies | JAN1N5621US vs BYM12-150HE3_A/I |
| JANTXV1N3614US | Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, MELF-2 | Microsemi Corporation | JAN1N5621US vs JANTXV1N3614US |
| EGL41D-E3/96 | Rectifier Diode, 1 Phase, 1 Element, 1A, 200V V(RRM), Silicon, DO-213AB, | Vishay Intertechnologies | JAN1N5621US vs EGL41D-E3/96 |