Datasheets
JAN1N5621US by:

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2

Part Details for JAN1N5621US by Sensitron Semiconductors

Overview of JAN1N5621US by Sensitron Semiconductors

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Price & Stock for JAN1N5621US

Part # Distributor Description Stock Price Buy
DISTI # JAN1N5621US
Avnet Americas Diode Fast Recovery Rectifier 800V 1A 2-Pin MELF-1 - Bag (Alt: JAN1N5621US) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 250 Container: Bag 0
  • 1 $5.4444
  • 50 $5.4444
  • 100 $5.4444
  • 500 $5.4444
  • 1,000 $5.4444
$5.4444 Buy Now

Part Details for JAN1N5621US

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JAN1N5621US Part Data Attributes

JAN1N5621US Sensitron Semiconductors
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JAN1N5621US Sensitron Semiconductors Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
Part Life Cycle Code Active
Ihs Manufacturer SENSITRON SEMICONDUCTOR
Package Description MELF-1, 2 PIN
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY
Application FAST RECOVERY
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.6 V
JESD-30 Code E-LELF-R2
Non-rep Pk Forward Current-Max 25 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Output Current-Max 1 A
Package Body Material GLASS
Package Shape ELLIPTICAL
Package Style LONG FORM
Qualification Status Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 800 V
Reverse Current-Max 0.5 µA
Reverse Recovery Time-Max 0.3 µs
Reverse Test Voltage 800 V
Surface Mount YES
Terminal Form WRAP AROUND
Terminal Position END

Alternate Parts for JAN1N5621US

This table gives cross-reference parts and alternative options found for JAN1N5621US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N5621US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BYM13-30-E3/97 SCHOTTKY 30V 1A 2PIN DO-213AB - Tape and Reel Vishay Semiconductors JAN1N5621US vs BYM13-30-E3/97
EGL41D Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, General Instrument Corp JAN1N5621US vs EGL41D
BYM12-400HE3/97 ULTRA FAST RECOVERY RECTFR 400V 1A 2PIN DO-213AB - Tape and Reel Vishay Semiconductors JAN1N5621US vs BYM12-400HE3/97
1N5621US Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2 Sensitron Semiconductors JAN1N5621US vs 1N5621US
BYM12-300-E3/96 Rectifier Diode, 1 Phase, 1 Element, 1A, 300V V(RRM), Silicon, DO-213AB, Vishay Intertechnologies JAN1N5621US vs BYM12-300-E3/96
BYM12-300 Rectifier Diode, 1 Element, 0.5A, 300V V(RRM), Silicon, DO-213AB, General Instrument Corp JAN1N5621US vs BYM12-300
BYM12-300HE3/97 ULTRA FAST RECOVERY RECTFR 300V 1A 2PIN DO-213AB - Tape and Reel Vishay Semiconductors JAN1N5621US vs BYM12-300HE3/97
SGL41-30-E3/96 Diode Schottky 30V 1A 2-Pin DO-213AB T/R Vishay Semiconductors JAN1N5621US vs SGL41-30-E3/96
JAN1N5621UL Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, MELF-2 Sensitron Semiconductors JAN1N5621US vs JAN1N5621UL
JANTX1N5621UL Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, MELF-2 Sensitron Semiconductors JAN1N5621US vs JANTX1N5621UL
Part Number Description Manufacturer Compare
BYM12-300-E3/97 Rectifier Diode, 1 Phase, 1 Element, 1A, 300V V(RRM), Silicon, DO-213AB, Vishay Intertechnologies JAN1N5621US vs BYM12-300-E3/97
EGL41D Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, General Instrument Corp JAN1N5621US vs EGL41D
EGL41G-E3/96 Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-213AB, Vishay Intertechnologies JAN1N5621US vs EGL41G-E3/96
CLLR1U-02TR Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, LEADLESS, PLASTIC, MELF-2 Central Semiconductor Corp JAN1N5621US vs CLLR1U-02TR
BYM12-300-E3/96 Rectifier Diode, 1 Phase, 1 Element, 1A, 300V V(RRM), Silicon, DO-213AB, Vishay Intertechnologies JAN1N5621US vs BYM12-300-E3/96
1N5621UV Rectifier Diode, 1 Element, 1A, Silicon, Sensitron Semiconductors JAN1N5621US vs 1N5621UV
EGL41C Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, General Instrument Corp JAN1N5621US vs EGL41C
SGL41-30-E3/97 Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, Vishay Intertechnologies JAN1N5621US vs SGL41-30-E3/97
BYM13-30HE3/97 Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, MELF-2 Vishay Intertechnologies JAN1N5621US vs BYM13-30HE3/97
EGL41G Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-213AB, DO-213AB, 2 PIN International Semiconductor Inc JAN1N5621US vs EGL41G

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