JANTX2N6790
Description: Power Field-Effect Transistor, 3.5A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

Overview of JANTX2N6790 by Infineon Technologies AG

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Price & Stock for JANTX2N6790 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 250 Package Multiple: 1 0
  • 250 $18.0000
$18.0000 Buy Now

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Part Data Attributes for JANTX2N6790 by Infineon Technologies AG

JANTX2N6790
Infineon Technologies AG
-
-
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
TO-39, 3 PIN
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
0.242 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
3.5 A
Drain-source On Resistance-Max
0.85 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
JESD-30 Code
O-MBCY-W3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
20 W
Pulsed Drain Current-Max (IDM)
14 A
Qualification Status
Qualified
Reference Standard
MIL-19500/555
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. JANTX2N6790
    Infineon Technologies AG
    Power Field-Effect Transistor, 3.5A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
    VS

Alternate Parts for JANTX2N6790

This table gives cross-reference parts and alternative options found for JANTX2N6790. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6790, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFF220 Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Motorola Semiconductor Products JANTX2N6790 vs IRFF220
JANTX2N6790 Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Fairchild Semiconductor Corporation JANTX2N6790 vs JANTX2N6790
2N6790R1 3.5A, 200V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6790 vs 2N6790R1
2N6790 Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corporation JANTX2N6790 vs 2N6790
2N6790 Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) JANTX2N6790 vs 2N6790
2N6790 Power Field-Effect Transistor, 3.5A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Resistors JANTX2N6790 vs 2N6790
2N6790 Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Motorola Semiconductor Products JANTX2N6790 vs 2N6790
2N6790R1 Power Field-Effect Transistor, 3.5A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Resistors JANTX2N6790 vs 2N6790R1
IRFF220 3.5A, 200V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Rochester Electronics LLC JANTX2N6790 vs IRFF220
IRFF220 3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation JANTX2N6790 vs IRFF220
Part Number Description Manufacturer Compare
UFNF220 Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) JANTX2N6790 vs UFNF220
IRFF223R Power Field-Effect Transistor, 3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor JANTX2N6790 vs IRFF223R
IRFF220-JQR-BR1 3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6790 vs IRFF220-JQR-BR1
2N6790R1 3.5A, 200V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6790 vs 2N6790R1
JANTX2N6790 Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor JANTX2N6790 vs JANTX2N6790
IRFF223R 3A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation JANTX2N6790 vs IRFF223R
JANTXV2N6790 Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor JANTX2N6790 vs JANTXV2N6790
UFNF223 Power Field-Effect Transistor, 3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) JANTX2N6790 vs UFNF223
IRFF223 Power Field-Effect Transistor, 3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier JANTX2N6790 vs IRFF223
IRFF220 Power Field-Effect Transistor, 3.5A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Resistors JANTX2N6790 vs IRFF220

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