Part Details for JANTX2N6849 by International Rectifier
Overview of JANTX2N6849 by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JANTX2N6849
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 10 |
|
RFQ | ||
|
|
Bristol Electronics | 254 |
|
RFQ | ||
|
|
Quest Components | MOSFET Transistor, P-Channel, TO-205AF | 1 |
|
$17.0625 | Buy Now |
|
|
Quest Components | MOSFET Transistor, P-Channel, TO-205AF | 7 |
|
$26.2500 | Buy Now |
Part Details for JANTX2N6849
JANTX2N6849 CAD Models
JANTX2N6849 Part Data Attributes:
|
|
JANTX2N6849
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
JANTX2N6849
International Rectifier
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
|
| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | BCY | |
| Package Description | HERMETIC SEALED, TO-39, 3 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 92 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.345 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/564 | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTX2N6849
This table gives cross-reference parts and alternative options found for JANTX2N6849. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6849, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N6849-JQRR1 | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6849 vs 2N6849-JQRR1 |
| JANS2N6849 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | International Rectifier | JANTX2N6849 vs JANS2N6849 |
| IRFF9130R1 | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6849 vs IRFF9130R1 |
| 2N6849TX | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | JANTX2N6849 vs 2N6849TX |
| IRFF9130-QR-BR1 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | JANTX2N6849 vs IRFF9130-QR-BR1 |
| JANTXV2N6849 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.32ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Semicoa Semiconductors | JANTX2N6849 vs JANTXV2N6849 |
| 2N6849TXV | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | JANTX2N6849 vs 2N6849TXV |
| 2N6849-JQR-A | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6849 vs 2N6849-JQR-A |
| 2N6849R1 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | JANTX2N6849 vs 2N6849R1 |
| JANTX2N6849 | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | JANTX2N6849 vs JANTX2N6849 |