Part Details for JANTXV2N5660 by New England Semiconductor
Overview of JANTXV2N5660 by New England Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for JANTXV2N5660
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 4 |
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$51.2000 | Buy Now |
Part Details for JANTXV2N5660
JANTXV2N5660 CAD Models
JANTXV2N5660 Part Data Attributes
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JANTXV2N5660
New England Semiconductor
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Datasheet
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JANTXV2N5660
New England Semiconductor
Power Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-213AA, 2 PIN
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
Package Description | TO-213AA, 2 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 1 A | |
Collector-Emitter Voltage-Max | 200 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 40 | |
JEDEC-95 Code | TO-213AA | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 35 W | |
Power Dissipation-Max (Abs) | 20 W | |
Qualification Status | Not Qualified | |
Reference Standard | MIL | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 20 MHz | |
Turn-off Time-Max (toff) | 850 ns | |
Turn-on Time-Max (ton) | 250 ns | |
VCEsat-Max | 0.4 V |