There are no models available for this part yet.
Overview of JANTXV2N5667S by VPT Components
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Industrial Automation
Audio and Video Systems
Price & Stock for JANTXV2N5667S by VPT Components
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
JANTXV2N5667S
|
Avnet Americas | - Bulk (Alt: JANTXV2N5667S) Min Qty: 62 Package Multiple: 1 Container: Bulk | 0 |
|
$19.9836 / $23.2596 | Buy Now | |
DISTI #
JANTXV2N5667S
|
TTI | Bipolar Transistors - BJT MIL-PRF-19500/455 Min Qty: 35 Package Multiple: 1 Container: Bulk | Americas - 0 |
|
$22.7500 | Buy Now |
CAD Models for JANTXV2N5667S by VPT Components
Part Data Attributes for JANTXV2N5667S by VPT Components
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
VPT COMPONENTS
|
Package Description
|
TO-5, 3 PIN
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Date Of Intro
|
2020-02-13
|
Case Connection
|
COLLECTOR
|
Collector Current-Max (IC)
|
5 A
|
Collector-Base Capacitance-Max
|
120 pF
|
Collector-Emitter Voltage-Max
|
300 V
|
Configuration
|
SINGLE
|
DC Current Gain-Min (hFE)
|
10
|
JEDEC-95 Code
|
TO-39
|
JESD-30 Code
|
O-MBCY-W3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Temperature-Max
|
200 °C
|
Operating Temperature-Min
|
-65 °C
|
Package Body Material
|
METAL
|
Package Shape
|
ROUND
|
Package Style
|
CYLINDRICAL
|
Polarity/Channel Type
|
NPN
|
Power Dissipation Ambient-Max
|
1.2 W
|
Power Dissipation-Max (Abs)
|
15 W
|
Qualification Status
|
Qualified
|
Reference Standard
|
MIL-19500
|
Surface Mount
|
NO
|
Terminal Form
|
WIRE
|
Terminal Position
|
BOTTOM
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
2000 ns
|
Turn-on Time-Max (ton)
|
250 ns
|
VCEsat-Max
|
1 V
|
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