Datasheets
JANTXV2N6796 by:

Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

Part Details for JANTXV2N6796 by Semicoa Semiconductors

Overview of JANTXV2N6796 by Semicoa Semiconductors

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Part Details for JANTXV2N6796

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JANTXV2N6796 Part Data Attributes:

JANTXV2N6796 Semicoa Semiconductors
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JANTXV2N6796 Semicoa Semiconductors Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer SEMICOA CORP
Package Description HERMETIC SEALED, TO-39, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 75 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.195 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Reference Standard MIL-19500
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for JANTXV2N6796

This table gives cross-reference parts and alternative options found for JANTXV2N6796. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6796, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6796 Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corporation JANTXV2N6796 vs 2N6796
2N6796TXV 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation JANTXV2N6796 vs 2N6796TXV
2N6796 Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) JANTXV2N6796 vs 2N6796
IRFF130-JQR-B 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTXV2N6796 vs IRFF130-JQR-B
IRFF130R1 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTXV2N6796 vs IRFF130R1
IRFF130-JQR-BR1 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTXV2N6796 vs IRFF130-JQR-BR1
JANTX2N6796 Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) JANTXV2N6796 vs JANTX2N6796
JANTX2N6796 Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Semicoa Semiconductors JANTXV2N6796 vs JANTX2N6796
JAN2N6796 Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN Unitrode Corporation JANTXV2N6796 vs JAN2N6796
IRFF130-JQR-B Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors JANTXV2N6796 vs IRFF130-JQR-B
Part Number Description Manufacturer Compare
IRFF120-JQR-B Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Resistors JANTXV2N6796 vs IRFF120-JQR-B
2N6788 Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor JANTXV2N6796 vs 2N6788
IRFF111 3.5A, 80V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation JANTXV2N6796 vs IRFF111
IRFF131 8A, 80V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation JANTXV2N6796 vs IRFF131
2N6796 Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Microsemi Corporation JANTXV2N6796 vs 2N6796
2N6788 Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corporation JANTXV2N6796 vs 2N6788
2N6788.MODR1 Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Resistors JANTXV2N6796 vs 2N6788.MODR1
IRFF130-JQR-B 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTXV2N6796 vs IRFF130-JQR-B
2N6796 Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) JANTXV2N6796 vs 2N6796
2N6788-QR-BR1 Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Resistors JANTXV2N6796 vs 2N6788-QR-BR1

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