Part Details for K7R323684M-FC20 by Samsung Semiconductor
Overview of K7R323684M-FC20 by Samsung Semiconductor
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Price & Stock for K7R323684M-FC20
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 55 |
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RFQ | ||
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Quest Components | 44 |
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$39.2870 / $46.2200 | Buy Now | |
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Quest Components | 3 |
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$96.1875 / $101.2500 | Buy Now |
Part Details for K7R323684M-FC20
K7R323684M-FC20 CAD Models
K7R323684M-FC20 Part Data Attributes
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K7R323684M-FC20
Samsung Semiconductor
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Datasheet
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K7R323684M-FC20
Samsung Semiconductor
QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | BGA | |
Package Description | 15 X 17 MM, 1 MM PITCH, FBGA-165 | |
Pin Count | 165 | |
Reach Compliance Code | not_compliant | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 0.45 ns | |
Additional Feature | PIPELINED ARCHITECTURE | |
Clock Frequency-Max (fCLK) | 200 MHz | |
I/O Type | SEPARATE | |
JESD-30 Code | R-PBGA-B165 | |
JESD-609 Code | e0 | |
Length | 17 mm | |
Memory Density | 37748736 bit | |
Memory IC Type | QDR SRAM | |
Memory Width | 36 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 1MX36 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Equivalence Code | BGA165,11X15,40 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | 240 | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.4 mm | |
Standby Current-Max | 0.3 A | |
Standby Voltage-Min | 1.7 V | |
Supply Current-Max | 0.7 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Width | 15 mm |
Alternate Parts for K7R323684M-FC20
This table gives cross-reference parts and alternative options found for K7R323684M-FC20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7R323684M-FC20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CY7C1415JV18-200BZXC | QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | K7R323684M-FC20 vs CY7C1415JV18-200BZXC |
CY7C1415JV18-200BZC | QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | K7R323684M-FC20 vs CY7C1415JV18-200BZC |
CY7C1415BV18-200BZXC | QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | K7R323684M-FC20 vs CY7C1415BV18-200BZXC |
CY7C1415AV18-200BZC | QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | K7R323684M-FC20 vs CY7C1415AV18-200BZC |