Part Details for KSC3123OMTF by Fairchild Semiconductor Corporation
Overview of KSC3123OMTF by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for KSC3123OMTF
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | KSC3123 - RF Small Signal Bipolar Transistor, 0.05A, Ultra High Frequency Band, NPN ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2409 |
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$0.0224 / $0.0263 | Buy Now |
Part Details for KSC3123OMTF
KSC3123OMTF CAD Models
KSC3123OMTF Part Data Attributes
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KSC3123OMTF
Fairchild Semiconductor Corporation
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Datasheet
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KSC3123OMTF
Fairchild Semiconductor Corporation
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Package Description | LEAD FREE PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.05 A | |
Collector-Base Capacitance-Max | 0.5 pF | |
Collector-Emitter Voltage-Max | 20 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 90 | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 0.15 W | |
Power Dissipation-Max (Abs) | 0.15 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 1400 MHz |