Datasheets
KSE800STU by:

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-126, 3 PIN

Part Details for KSE800STU by Fairchild Semiconductor Corporation

Overview of KSE800STU by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for KSE800STU

Part # Distributor Description Stock Price Buy
DISTI # 2156-KSE800STU-600039-ND
DigiKey TRANS NPN DARL 60V 4A TO126-3 Min Qty: 548 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 1089
In Stock
  • 548 $0.5500
$0.5500 Buy Now
Rochester Electronics Power Bipolar Transistor, 4A, 60V, NPN, TO-126, Plastic/Epoxy, 3 Pin RoHS: Compliant Status: Active Min Qty: 1 1122
  • 1 $0.5527
  • 25 $0.5416
  • 100 $0.5195
  • 500 $0.4974
  • 1,000 $0.4698
$0.4698 / $0.5527 Buy Now

Part Details for KSE800STU

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KSE800STU Part Data Attributes:

KSE800STU Fairchild Semiconductor Corporation
Buy Now Datasheet
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KSE800STU Fairchild Semiconductor Corporation Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-126, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-126
Package Description LEAD FREE, TO-126, 3 PIN
Pin Count 3
Manufacturer Package Code TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Collector Current-Max (IC) 4 A
Collector-Emitter Voltage-Max 60 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 750
JEDEC-95 Code TO-126
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 40 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

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