Part Details for KSH112GTM_SB82051 by Fairchild Semiconductor Corporation
Overview of KSH112GTM_SB82051 by Fairchild Semiconductor Corporation
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Part Details for KSH112GTM_SB82051
KSH112GTM_SB82051 CAD Models
KSH112GTM_SB82051 Part Data Attributes
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KSH112GTM_SB82051
Fairchild Semiconductor Corporation
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Datasheet
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KSH112GTM_SB82051
Fairchild Semiconductor Corporation
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-252 | |
| Package Description | LEAD FREE, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 2 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 200 | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 25 MHz |
Alternate Parts for KSH112GTM_SB82051
This table gives cross-reference parts and alternative options found for KSH112GTM_SB82051. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KSH112GTM_SB82051, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MJD112 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | Fairchild Semiconductor Corporation | KSH112GTM_SB82051 vs MJD112 |
| KSH112TF | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | KSH112GTM_SB82051 vs KSH112TF |
| KSH112TM | NPN Silicon Darlington Transistor, 2500-REEL | onsemi | KSH112GTM_SB82051 vs KSH112TM |
| KSH112 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Samsung Semiconductor | KSH112GTM_SB82051 vs KSH112 |
| MJD112TF | 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, 2000-REEL | onsemi | KSH112GTM_SB82051 vs MJD112TF |